Introduction
Prof. Iyer has been responsible for the initiation
and development of NCA&TSU’s Molecular Beam
Epitaxy (MBE) Laboratory, associated research program
and educational component. Her current research interests are
focused on the study of novel material systems grown by molecular
beam epitaxial (MBE), characterization and nano-device structures of
dilute antimonide nitride alloys encompassing near IR, Mid to Very
long wavelength IR regions for optoelectronic device applications.
She is also the Director of the Center of Excellence for Battlefield
Capability Enhancements, which focus on developing technologies for
environmentally stable flexible flat panel displays.
The research work carried out by Dr. Iyer over the last decade also
includes study of low threading dislocation density compliant layers
for devices operating in the mid infrared region, liquid phase
electro-epitaxial growth of Sb based binaries and quaternary alloys
lattice matched to GaSb for mid infrared optoelectronic device
applications, detailed study of the low temperature
photoluminescence and photoreflectance characteristics of these
layers to study the nature of the defects and critical energy
transition points, respectively, damage studies of the ion implanted
species in GaSb and their recovery by rapid thermal annealing using
Rutherford back-scattering/channeling technique, semi-insulating
properties of Fe-doped InP, and transparent and conducting oxides by
spray pyrolysis and sputtering.
Principal Accomplishments
MBE growth of GaAsSbN/GaAs
single quantum well structures of high quality LED and lasers at 1.6
μm, GaAsSbN thick epilayer lattice matched to GaAs of 1.0 eV band
gap for solar cell applications, low temperature MBE growth of novel
AlGaAsN for potential application in hybrid organic/inorganic light
emitting device, demonstrated SnTe as a well behaved n-type dopant
in InSb with a 77K mobility of 94,098 cm2/V-sec, liquid
phase epitaxial growth of high quality InGaAsSb lattice matched to
GaSb for infrared photodetectors, highly transparent and conducting
films of tin oxide films by spray pyrolysis and ZnO films by RF
sputtering.
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