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Recent Journal Publications:

 

 

Pavan Kasanaboina, Manish Sharma, Prithviraj Deshmukh, C.L. Reynolds Jr., Yang Liu, Shanthi Iyer, “Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi Shell Nanowires”, Nanoscale Research Letters 11(1), 1-6 (2016) DOI: 10.1186/s11671-016-1265-4.

1.      Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, Lewis Reynolds, Yang Liu and Shanthi Iyer, "Effect of Growth Parameters and Substrate Surface Preparation for High Density Vertical GaAs/GaAsSb Core-shell Nanowires with Photoluminescence Emission at 1.3 µm", Journal of Electronic Materials, 45(4) 2108-2114 (2016) (DOI: 10.1007/s11664-015-4316-1).

1.      Sai Krishna Ojha, Pavan Kumar Kasanaboina, C Lewis Reynolds.Jr, Thomas A Rawdanowicz, Yang Liu, Ryan M White and Shanthi Iyer, “ Incorporation of Be Dopant in GaAs Core and Core-Shell Nanowires by Molecular Beam Epitaxy”, J. Vac. Sci. Technol. B 34(2), 02L114-1 (2016).

Pavan Kumar Kasanaboina, Estiak Ahmad, Jia Li, Lewis Reynolds, Yang Liu and Shanthi Iyer, “Self Catalyzed Growth of Dilute Nitride GaAs/GaAsSbN/GaAs Core-Shell Nanowires by Molecular Beam Epitaxy”, Appl. Phys. Lett. 107, 103111  (2015).

 

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, C. Lewis Reynolds Jr., Yang Liu and Shanthi Iyer, “Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy”, Semiconductor Science and Technology, 30, 105036 (2015).

 

Ngoc Nguyen, Briana McCall, Robert Alston, Ward Collis, and Shanthi Iyer,The Effect of Annealing Temperature on the Stability of Gallium Tin Zinc Oxide Thin Film Transistors” Sem. Sci. Tech. 30, 105004 (2015).

 

Shanthi Iyer, L. Reynolds, T.Rawdanowicz, Sai Krishna Ojha, Pavan Kumar Kasanaboina and Adam Bowen, “A Study of Ga Assisted Growth of GaAs/GaAsSb Axial Nanowires by Molecular Beam Epitaxy”, Book Chapter in  Advances in Nanosciences and Nanoengineering,  Ajit D. Kelkar, Dan Herr and James G. Ryan. , CRC Press.: Boca Raton FL, ISBN 978-1-4822-3119-9, 2013, pages 31-49.

 

Nimai C. Patra, S. Bharatan, J. Li, and S. Iyer, “Annealing studies of heteroepitaxial InSbN on GaAs grown by molecular beam epitaxy for long-wavelength infrared detectors”, Journal of Applied Physics, 112, 083107, 2012

 

N. Patra, S. Bharatan, J. Li, M. L. Tilton and S. Iyer, MBE, “ Growth and Characterization of InSb1-xNx on GaAs for LWIR Applications”, Journal of Applied Physics, 111, 083104 (2012)

 

Sudhakar Bharatan, Shanthi Iyer, Jia Li, Thomas A. Rawdanowicz and Lewis Reynolds Jr, “A Study of MBE Grown InGaAsSbN/GaSb Single Quantum WellsJ. Vac. Sci. Technol. B, Vol. 29, No. 3, 28th Feb 2011

 

A. Bowen, J. Li, J. Lewis, K. Sivaramakrishnan, T. Alford & S. Iyer, “The Properties of  RF Sputtered Transparent and Conducting ZnO:F Films on Polyethylene Naphthalate Substrate”, Thin Solid Films.519 (2010) 1809–1816.

 

L.Wu, S. Iyer, K. Gibson, and J. Li K. Matney J. Reppert , A. M. Rao J. Lewis “A study of low-temperature growth of III-V alloys for transparent layers”, J. Vac. Sci. Tech. B, 27, 6, 2375 (2009).

 

K. Sivaramakrishnan, A. T. Ngo, S. Iyer, and T. L. Alford, Effect of Thermal Processing on Ag Thin Films of Varying Thickness Deposited on Zinc Oxide and Indium Tin Oxide”, Journal of Applied Physics, 105, 063525 (2009).

 

S. Bhagat, H. Han, Y. Zoo, J. Lewis, S. Grego, K. Lee, S. Iyer, and T.L. Alford, “Effects of Deposition Parameters on the Electrical and Mechanical Properties of Indium Tin Oxide on Polyethylene Naphthalate Substrates Deposited by Sputtering”, Thin Solid Films, 516,12, 4064-4069 (2008).

 

Kalyan Nunna, S. Iyer, L.Wu, J. Li, S.Bharatan, X.Wei, R.T. Senger, and  K.K. Bajaj,  “Nitrogen Incorporation and Optical Studies of GaAsSbN/GaAs Single Quantum Well Heterostructures”, Journal of Applied Physics,102, 053106 (2007).

 

S. Bharatan S. Iyer, K. Matney, K. Nunna, W. J. Collis, J. Reppert, A. M. Rao and P. R.C. Kent, “ The Effects of Annealing on the Structural, Optical and Vibrational Properties of Lattice-Matched GaAsSbN/GaAs Grown by Molecular Beam Epitaxy”, Journal of Applied Physics,102, 023503 (2007).

 

S. Iyer, L. Wu, J. Li, S. Potoczny, K. Matney and P. R. C. Kent, “Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells”,  Journal of Applied Physics, 101, 113508-13 (2007).

 

Kalyan Nunna, S. Iyer, L. Wu, S. Bharatan, Jia Li, K.K. Bajaj, X.Wei, and R.T. Senger, “Optical Studies of MBE Grown GaAsSbN/GaAs Single Quantum Well Structures”, J. Vac. Sci. Tech. B, 25, 3, 1113-16, (2007).

 

Jia Li, S. Iyer, Sudhakar Bharatan, Liangjin Wu, Kalyan Nunna, Ward Collis, K. Bajaj,  and K. Matney “Annealing Effects on the Temperature Dependence of the Photoluminescence of GaAsSbN Single Quantum Wells”, Journal of  Applied Physics, 98, 013703, (2005).

 

L. Wu, S. Iyer, K. Nunna, J. Li, S. Bharatan, W. Collis and K. Matney “MBE   Growth and Properties of GaAsSbN/GaAs Single Quantum Wells”, J. Cryst. Growth, 279, 3, 293-302 (2005).

 

T. A. Rawdanowicz, S. Iyer , W. C. Mitchel, A. Saxler and S. Elhamri, “Electronic properties of Hetero-epitaxial Undoped and n-InSb Epilayers using SnTe Source by Molecular Beam Epitaxy”, Journal of Applied Physics, 92, 296(2002).

 

S. Iyer, S. Mulugeta, W. Collis, S. Venkatraman, K. K. Bajaj and G. Coli, Photoreflectance Studies of Te-Doped GaSb at the E0+D0 Transition”,  J. Appl. Phys.  87, 2336-39 (2000).

 

S. Iyer, Jie Li, Shahnaz Chowdhury - Nagle, and K.K Bajaj, “InAsSb/InTlSb Superlattice- A Proposed Heterostructure for Long Wavelength Infrared Detectors”, J. Electron. Mater. 26,347 (1997).

 

S. Iyer, R. Parakkat, B. Mangalam, B. Patnaik, M. Falvo, and N. Parikh, "A Study of the Ion Implantation Damage and Annealing Behavior in GaSb", J. Electron. Mater. 25, 119-124 (1996).

 

S. Iyer, Lori Small, S. Hegde, K.Bajaj, and Ali Abul-Fadl “Low Temperature Photoluminescence of LPEE Grown Te-Doped GaSb" J. Appl. Phys., 77, 5902-09 (1995).

 

S. Iyer, S. Hegde, K.K. Bajaj, A. Abul‑Fadl, and W. Mitchel, "Photoluminescence Study of LPEE Grown GaInAsSb Epilayers on GaSb"  J. Appl. Phys. 73, 3948-3951 (1993).

 

S. Iyer, S. Hegde, A. Abul‑Fadl, K.K. Bajaj and W. Mitchel, " Growth and Photoluminescence Study of GaSb and Ga1-xInxAsySb1-y Grownon GaSb Substrates by Liquid Phase Electroepitaxy", Phys. Rev. B 47,1329-39 (1993).

 

Abul‑Fadl, W. Collis, S. Maanaki, T. McCarty and S. Iyer, "Selective Etchback and Growth of InGaAs on (100) Fe:InP by Electroepitaxy", J. Electron. Matter., 19, 111‑6 (1990).

 

S. Iyer, A.T. Macrander, R.F. Karlicek, Jr. and S. Lau, "Semi‑Insulating Properties of Fe‑Doped InP Grown by Hydride VPE", J. Appl. Phys., 66, 5880‑4 (1989).

 

S. Iyer, A. Abul‑Fadl, W.J. Collis and M.N. Khorrami, "Properties of Undoped and Mn‑Doped InGaAsP Grown by LPEE", Thin Solid Films 163, 427‑435 (1988)

 

Shanthi Iyer, E.K. Stefanakos, A. Abul‑Fadl and W.J. Collis "CCLPE Growth and Characterization of InGaAsP", J. Crystal Growth 70, 162‑8 (1985).

 

Shanthi Iyer, E.K. Stefanakos, A. Abul‑Fadl and W.J. Collis "Diffusion Coefficient and Differential Mobility of As in InAs for LPE and Current Controlled LPE", J. Crystal Growth 67, 337‑42 (1984).

 

E. Shanthi, A. Banerjee and K.L. Chopra, "Dopants Effects in Sprayed Tin Oxide Films", Thin Solid Films 88, 93‑100 (1982).

 

E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Electrical and Optical Properties of Tin Oxide Films Doped with F and (Sb+F)", J. Appl. Phys. 53, 1615‑21 (1982).

 

E. Shanthi, V. Dutta, A. Banerjee and K.L. Chopra, "Electrical and Optical Properties of Undoped and Antimony ‑ Doped Tin Oxide Films", J. Appl. Phys. 51, 6243‑51 (1980).[cited 260 times as per the Science Citation Index]

 

E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Annealing Characteristics of Tin Oxide Films Prepared by Spray Pyrolysis”, Thin Solid Films 71, 237‑44 (1980).

 

 

Refereed Proceedings:

 

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat U. Sami, Lewis Reynolds, Yang Liu and Shanthi Iyer,“Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications”, presented at SPIE Photonics West Conference-2015, San Francisco, CA, Feb.9, 2015. Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 937307 (February 27, 2015); doi:10.1117/12.2080572.

 

Robert Alston, Shanthi Iyer, Tanina Bradley, Jay Lewis, Garry Cunningham and Eric Forsythe, “ Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications”, SPIE OPTO, 90050D-90050D-10., 25th Feb 2014, SanFrancisco, CA.

 

Tanina Bradley, Shanthi Iyer, Robert Alston, Ward Collis, Jay S. Lewis, Garry Cunningham, and Eric Forsythe , “The Effects of Deposition Conditions and Annealing Temperature on the Performance of Gallium Tin Zinc Oxide Thin Film Transistors”, Proc. SPIE 8626, Oxide Based Materials and Devices IV, 862615 (March 18, 2013) .

 

Shanthi Iyer, Kalyan Nunna, Sudhakar Bharatan and Jia Li, “Molecular Beam Epitaxial Growth and Characteristics of Dilute Nitride Quantum Well Heterostructures”, IC-CFT Proceedings (2011).

 

Nimai Patra, Sudhakar Bharatan, Jia Li, Michael L. Tilton and Shanthi Iyer, “Growth and Characterization of InSb1-xNx on GaAs for LWIR Applications”, Oral Presentation, 28th North American Molecular Beam Epitaxy (NAMBE) conference, San Diego, CA, Aug 14-17, 2011.

 

Shanthi Iyer, Kalyan Chakravarthy Nunna, Jia Li, & Sudhakar Bharatan, “A Study of MBE Grown GaAsSbN/GaAs Single Quantum Wells for 1.55µm Emission”, 38th International Symposium on Compound Semiconductor, Berlin Germany, May 23, 2011

 

S. Bhagat, Y. Zoo, H. Han, J. Lewis, S. Grego, K. Lee, S. Iyer, and T. L. Alford “Mechanical Properties of Indium Tin Oxide on Polyethylene Napthalate Substrates”, Materials Research Society Proceedings, 1012 Y12-21 (2007).

 

Sudhakar Bharatan, S. Iyer, Kevin Matney, Ward J. Collis, Kalyan Nunna, Jia Li, Liangjin Wu, Kristopher McGuire, Laurie E. McNeil, Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications”, Mater. Res. Soc. Symp. Proc. 891, 0891-EE10-36.(1-6) (2006).

 

Liangjin Wu, S. Iyer, Kalyan Nunna, Sudhakar Bharatan, Jia Li, and Ward J. Collis, “Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs”, presented at Materials Research Symposium J18.34, 2005 Spring Meeting, San Francisco, CA. Mar. 28, 2005, Mat. Res. Soc. Symp. Proc. J18.34 (2005).

  

Liangjin Wu, S. Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis, and Kevin Matney, “MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells”   Mat. Res. Soc. Symp. Proc. 799, Z1.9.1 (2004).

 

J. Li, T. Rawdanowicz, S. Iyer, S. Venkatraman and W.J. Collis, “Molecular Beam Epitaxial Growth and Doping of InSb using SnTe Source”  Proc. of TMS Editor Ben Q Li, p277 (1998).

 

J. Li, S. Iyer, S. Venkatraman, “Rheed Study of Oxide Desorption of InSb”, Presented at the MRS Fall Meeting, Boston, MA (Dec.1, 1997), Mat. Res. Soc. Symp. Proc. 484 (1997).

 

S. Iyer, S. Mulugeta, J. Li, B. Mangalam, and S. Venkatraman, “Photoreflectance Study of MBE Grown Te-doped GaSb at the E0+D0 Transition”, Presented at the MRS Fall Meeting, Boston, MA (Dec.2, 1997), Mat. Res. Soc. Symp. Proc. 484, 57-62 (1997).

 

S. Iyer, K.K. Bajaj, Shahnaz Chowdhury-Nagle and Jie Li, “Theoretical Study of InTlSb/InAsSb Superlattice for Far Infared Detector”, Presented at the MRS Spring Meeting, San Francisco (April 8, 1996), Mat. Res. Soc. Symp. Proc. 421, 395 (1996).

 

S. Iyer, R. Parakkat, B. Patnaik, N. Parikh  and S. Hegde, "Ion implantation damage and annealing in GaSb", Mat. Res. Soc. Symp. Proc., 316, 185-190 (1994).

           

Shanthi N. Iyer, S. Hegde, K. K. Bajaj, A. Abul-Fadl, and W. Mitchel, “Low Temperature PL Characterization of LPEE Grown GaSb and GaInAsSb Epilayers on GaSb" Mat. Res. Symp. Proc. vol. 299, 41-45 (1993).

 

S. Iyer, A. Abul‑Fadl, A. Macrander, J. Lewis, W. Collis and J. Sulhoff,"Liquid Phase Electroepitaxial (LPEE) Growth of GaSb and GaInAsSb"; Presented at the MRS Fall Meeting, Boston, MA (Nov 30, 1989), Mat. Res. Soc. Symp. Proc., Vol.160, 445‑449 (1990).

 

S. Iyer, A. Abul‑Fadl, W.J. Collis and M.N. Khorrami, "Characterization of Mn‑Doped InxGa1‑xAsyP1‑y  Grown by LPEE""; Presented at the MRS Fall Meeting, Boston, MA, Dec.1, 1987, Proc. of Materials Research  Symposium on  Epitaxy of  Semiconductor Layered  Structures, Vol. 102, 201‑7 (1987).

 

A. Abul‑Fadl, S. Maanaki, W.J. Collis and S. Iyer, "Selective Electro‑epitaxial Growth of In.53Ga.47As",IEEE Southeast Con., 52‑55 (1987).

 

E. Shanthi, A. Banerjee and K.L. Chopra, "Undoped and Doped SnO2/Si Junctions for Photovoltaic Applications", Proc. National Solar Energy Convention, Annamalainagar, India (1980), p.382.

 

E. Shanthi, D.K. Pandya, and K.L. Chopra, "Transparent and Conducting Coatings for Solar Cells"; presented at the 7th Int. Solar Energy Congr., New Delhi, India (Jan. 1978), Sun: Mankind's Future Source of Energy, Oxford, Pergamon (1978), p. 698 ‑ 702.

 

 

Non‑refereed Publications and Presentations

 

Pavan Kumar Kasanaboina, Estiak Ahmad, Jia Li, Lewis Reynolds, Yang Liu  and Shanthi Iyer, “1.3 μm Emission from Dilute Nitride GaAs/ GaAsSbN/GaAs Core-Multishell Nanowires grown by Molecular Beam Epitaxy”,  Mater. Res. Society Fall Meeting, Boston, MA, Dec. 1st, 2015.

 

Shanthi Iyer, “Nanowires for Single Photon Detection and Solar Cells”,  NC SBTDC’s SBIR/STTR Symposium, Cary, NC, Nov. 18, 2015, Poster Presentation.

 

Pavan Kumar Kasanaboina,  Jia Li, C.L. Reynolds Jr., Yang Liu  and Shanthi Iyer, “Growth and Characterization of  Dilute Nitride GaAs/ GaAsSbN/GaAs Core-Multishell Nanowires for  Photodetector Applications”,  MRS/ASM/AVS Meeting 2015,Raleigh,NC, Oral presentation, Nov 13, 2015.

 

Manish Sharma, Pavan K. Kasanaboina, Prithviraj Deshmukh and Shanthi Iyer, “Enhancement in photoluminescence intensity with nitride surface passivation of GaAs/GaAsSb core-shell nanowires ”, MRS/ASM/AVS Meeting 2015,Raleigh,NC, Poster presentation, Nov 13,2015.

 

Estiak Ahmad,  P. K. Kasanaboina, M Sharma,  P Deshmukh, Jia Li,  and Shanthi Iyer , “MBE Grown Te Doped GaAsSb and  p-i-n Nanowires”,MRS/ASM/AVS Meeting 2015,Raleigh,NC, Poster presentation, Nov 13, 2015.

 

P. Deshmukh, P. Kasanaboina and  S. Iyer, “Effects of  Annealing  on GaAs/GaAsSbN/GaAs Core/Multi-Shell Nanowires”, MRS/ASM/AVS Joint Symposium Meeting 2015,Raleigh,NC, Poster presentation, Nov 13, 2015.

 

S.K. Ojha, P.K. Kasanaboina, L. Reynolds, Y. Liu and S. Iyer, " Effects of Sb Variation in GaAsSb Segments in Ga Assisted Axial GaAs/GaAsSb/GaAs Heterostructure Nanowires ", NAMBE 2015, poster presentation, Mayan Riviera, Mexico (Oct 4-7, 2015)

 

S.K. Ojha, P.K. Kasanaboina, L. Reynolds, T. Rawdanowicz, Y. Liu, R.M. White and Shanthi Iyer, " Study of Be Doping in GaAs Nanowires Using Photoluminescence and Raman Spectroscopy", NAMBE 2015, poster presentation, Mayan Riviera, Mexico (Oct 4-7, 2015)

 

P. Kasanaboina, P. Deshmukh, L. Reynolds, Y. Liu, S. Iyer, “Effects of Annealing on GaAs/GaAsSbN/GaAs Core/multi-shell Nanowires”, The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), Poster Presentation, Mayan Riviera,Mexico,October 4 - 7, 2015.  

 

Estiak Ahmad, P. K. Kasanaboina,  Manish Sharma,  Jia Li,  and Shanthi Iyer, “Study of MBE Grown Te Doped Axial GaAs/GaAsSb Heterostructure Nanowires” Nano manufacturing-2015, Joint School of Nanoscience and Nanoengineering, Greensboro,NC, Poster presentation, Sep 30, 2015

 

Pavan Kasanaboina and Shanthi Iyer, “Patterned Growth of GaAs Nanowires using Electron Beam Lithography”,  Nano Manufacturing Conference 2015, Greensboro, NC, Sept. 30, 2015.

 

Manish Sharma, Pavan K. Kasanaboina, Prithviraj Deshmukh, and Shanthi Iyer, “Enhancement in Photoluminescence with Nitride Surface Passivation of GaAs/GaAsSb Core-Shell Nanowire”, Nano Manufacturing 2015, Greensboro, NC, September 30, 2015.

Prithviraj Deshmukh, Pavan K. Kasanaboina,  and  S. Iyer, “Effects of Annealing on GaAs/GaAsSbN/GaAs Core/Multi-Shell Nanowires”, Nano Manufacturing Conference 2015, Greensboro, NC, Sept. 30, 2015.

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, Lewis Reynolds, Yang Liu, Shanthi Iyer , “Growth Temperature Dependence of the GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy”, Oral Presentation in 57th Electronic Materials Conference in Narrow Bandgap Materials and Devices Session L.,Columbus, Ohio, June 24, 2015,

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Ngoc Nguyen and Shanthi Iyer, “High Performance Gallium Tin Zinc Oxide Thin Film Ttransistors by RF Magnetron for Display Applications”, poster presentation, 4th Annual Graduate Poster Competition COE 2015, NC,USA(April 24th , 2015)

 

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, C. Lewis Reynolds Jr., Yang Liu and Shanthi Iyer,  “Engineering of GaAs/GaAsSb Nanowires for Next Generation IR Photodetectors”, poster presentation, 4th Annual Graduate Poster Competition COE 2015, NC,USA(April 24th , 2015).

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lewis Reynolds, Tom Rawdanowicz and Shanthi Iyer, “Be doping of core & core/shell GaAs nanowires through molecular beam epitaxy“, poster presentation, 4th Annual Graduate Poster Competition COE 2015, NC,USA(April 24th , 2015)

 

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat U. Sami, Lewis Reynolds, Yang Liu and Shanthi Iyer,"Effect of Sb on Morphology and Optical Properties of GaAs/GaAsSb Nanowires Grown by Molecular Beam Epitaxy”, Poster presentation, Fitzpatrick Institute for Photonics (FIP) Annual Symposium, Duke University, Durham, NC (March 9-10, 2015).

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lewis Reynolds, Tom Rawdanowicz and Shanthi Iyer, “Effect of Be doping on core & core/shell GaAs nanowires through molecular beam epitaxy“,Fitzpatrick Institute for Photonics (FIP) Annual Symposium, Duke University, Durham, NC,USA(March 9-10th, 2015) poster presentation

 

Ngoc Nguyen and Shanthi Iyer, “Transparent amorphous gallium tin zinc oxide thin film transistors by RF magnetron sputtering for display applications”, MRS/ASM/AVS joint symposium poster presentation, Raleigh, NC.(Nov 7th,2014)

 

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, Lewis Reynolds and Shanthi Iyer Structural and Optical Characteristics of GaAs/GaAsSb Core-Shell Structured Nanowires Grown By Molecular Beam Epitaxy, MRS/ASM/AVS Meeting Joint Symposium 2014,Raleigh,NC, Oral presentation, Nov 7,2014.

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lew Reynolds and Shanthi Iyer,” Compositional variation of Sb in Ga assisted axial GaAs/GaAsSb/GaAs heterostructure nanowires on chemically etched Si substrate”, MRS/ASM/AVS Joint Symposium 2014, poster presentation, Raleigh, NC.(Nov 7th,2014)

 

Md Shifat Us Sami, JiaLi, Sai Krishna Ojha, Pavan Kumar Kasanaboina and , Shanthi Iyer,“A Low Temperature Micro-photoluminescence Study of Self-assisted MBE Grown Core and Core-Shell Configured GaAsSb(N)/GaAs Nanowires for Nanoscale Photodetectors”, MRS/ASM/AVS Joint Symposium at NCSU, Friday, November 7, 2014.

Md Shifat Us Sami, Jia Li, Sai Krishna Ojha, Pavan Kumar Kasanaboina and ShanthiIyer, “ Micro-photoluminescence Study of Self-assisted MBE Grown Core and Core-Shell GaAs/GaAsSb Nanowires”, Nano Manufacturing 2014 – Conference at JSNN, Wednesday, September 24, 2014

Pavan Kumar Kasanaboina,Sai Krishna Ojha, Shifat Us Sami, Lewis Reynolds, Jia Li and Shanthi Iyer, “Compositional Modulation of GaAs/GaAsSb Radial Heterostructured Nanowires for Telecommunication Applications,” Nano manufacturing-2014,Joint School of Nanoscience and Nanoengineering, Greensboro, NC, Poster presentation, Sep 24,2014

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lewis Reynolds, Tom Rawdanowicz and Shanthi Iyer, “Comparison of Ga assisted axial GaAs/GaAsSb/GaAs heterostructure nanowires with and without chemical etching on Si substrate “, poster presentation, Nano Manufacturing 2014 Conference, Greensboro, NC(Sep 24th,2014)

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lewis Reynolds, Tom Rawdanowicz and Shanthi Iyer, "A study of Be doping in Ga assisted GaAs Nanowires by Molecular Beam Epitaxy",NAMBE 2014, poster presentation, Flagstaff,Arizona (Sep 8, 2014)

Sai Krishna Ojha, Pavan Kumar Kasanaboina,Lewis Reynolds, Thomas Rawdanowicz and Shanthi Iyer, "Growth Optimization of GaAsSb Inserts in Ga Assisted GaAs/GaAsSb Heterostructure Nanowires for IR Photodetector Applications", 56th Electronic Materials Conference (EMC) and Exhibition, Santa Barbara, CA, (June 24-27, 2014).

 

Pavan Kasanaboina, Sai Krishna Ojha, Lewis Reynolds, Thomas Rawdanowicz, R.M.White and Shanthi Iyer, “Building of Nano structures: A Selective Area Growth of GaAs Nanowires”, College of Engineering Poster Competition, NCA&T State University, Greensboro,NC, Poster presentation,(April,25th 2014); Got a runner up award ($350) for the best poster.

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina, Lewis Reynolds, Thomas Rawdanowicz and Shanthi Iyer, “Effect of Be doping and GaAsSb inserts in self-assisted GaAs nanowires(NWs) for IR device

Applications”, College of Engineering Poster Competition, NCA&T State University, Greensboro,NC, Poster presentation,(April,25th, 2014)

Pavan Kumar Kasanaboina, Sai Krishna Ojha,Lewis Reynolds, Thomas Rawdanowicz, R.M.White and Shanthi Iyer, “ Design of p-GaAs Nanowires for p-i-n Heterostructured Nanowire Photodetector/Solar Cell”, Nano manufacturing-2013,Joint School of Nanoscience and Nanoengineering, Greensboro,NC, Poster presentation, Sep 25,2013

Sai Krishna Ojha, Pavan Kumar Kasanaboina,Lewis Reynolds, Thomas Rawdanowicz and Shanthi Iyer, “Effect of GaAsSb Inserts in Ga Assisted GaAs/GaAsSb Heterostructured Nanowires and Be Doping in GaAs NWs”, MRS Fall Meeting 2013, Oral presentation,(Dec 03 2013).

                 

Sai Krishna Ojha, Pavan Kumar Kasanaboina,Lewis Reynolds, Thomas Rawdanowicz and Shanthi Iyer, “Study of Double Segmented GaAsSb Inserts in Ga Assisted GaAs/GaAsSb Heterostructure Nanowires for IR Photodetector Applications”, MRS/ASM/AVS/AReMS Meeting 2013,Raleigh,NC, Oral presentation,(Nov 15,2013)

                                            

Pavan Kasanaboina, Sai Krishna Ojha, Lewis Reynolds, Thomas Rawdanowicz, R.M.White and Shanthi Iyer, “Design and Optimization of p-GaAs Nanowires for Photodetector/Solar Cell Applications”, MRS/ASM/AVS/AReMS Meeting 2013,Raleigh,NC, Poster presentation,(Nov 15,2013)

 

Robert Alston, Jay Lewis, Garry B. Cunningham and Shanthi Iyer,” The Study of Low Temperature Nano-Scale Transistors Fabricated on Silicon and PEN substrates”, MRS/ASM/AVS/AReMS Meeting 2013,Raleigh,NC

 

Briana McCall, Ngoc Nguyen, Robert Alston, Jia Li  and Shanthi Iyer, “ Improved characteristics & Bias Stress Stability of GSZO Thin Film Transistors on Annealing”, MRS/ASM/AVS/AReMS Joint Symposium at NCSU. November 15 2013.

 

Sai Krishna Ojha, Pavan Kumar Kasanaboina,Lewis Reynolds, Thomas Rawdanowicz and Shanthi Iyer, “Study of  double  segmented GaAsSb inserts in Ga Assisted GaAs/GaAsSb Heterostructure Nanowires for IR photodetector applications,"NanoManufacturing Conference 2013,Greensboro, NC 27401,Poster presentation,(Sept 25,2013)

 

Pavan Kasanaboina, Sai Krishna Ojha,Lewis Reynolds, Thomas Rawdanowicz, R.M.White and Shanthi Iyer, “Design of p-GaAs Nanowires for p-i-n Heterostructured Nanowire Photodetector/Solar Cell”, Nano manufacturing-2013,Joint School of Nanoscience and nanoengineering, Greensboro,NC, Poster presentation,(Sep 25,2013)

 

Briana McCall, Ngoc Nguyen, Robert Alston, Jia Li and Shanthi Iyer. Improved characteristics & Bias Stress Stability of GSZO Thin Film Transistors on Annealing. NanoManufacturing 2013 Conference, JSNN, September 25 2013

 

Robert Alston, Jay Lewis, Garry B. Cunningham, and Shanthi Iyer, “The Study of Low Temperature Nano-Scale Transistors Fabricated on Silicon and PEN substrates”, NanoManufacturing 2013 Conference, JSNN, September 25 2013

 

Robert Alston and Shanthi Iyer,” The Study of Low Temperature Nanoscale Transistors Fabricated on Silicon and PEN Substrates” NCA&TSU College of Engineering Poster Presentation, April 25, 2013.

 

Sai Krishna Ojha and Shanthi Iyer, “Ga Assisted GaAs/GaAsSb Heterostructure Nanowires for P-I-N Photodetectors”, NCA&TSU College of Engineering Poster Presentation, April 25, 2013.

 

 Adam Bowen, Shanthi Iyer, and L.R. Ram-Mohan,“A Study of GaInSbN/GaSb Epilayers and InAs/GaInSbN Superlattices by MBE for Long Wavelength IR Photodetectors”, MRS/ASM/AVS North Carolina Symposium, November 16th, 2012. Placed 3rd in the poster presentation.

 

Tewodros Tessema, Robert Alston, “The Study of RF Sputtered Gallium Tin Zinc Oxide Based Thin Film Transistors”, Materials Research Society Conference North Carolina Section, November 16th 2012, Raleigh NC, Oral presentation.

 

Michael Chestnut, Ngoc Nguyen, Adam Bowen, Tewodross Tessema and Shanthi Iyer, “Energy Level in the Suplerlattice using Optel_Zinc Blende”, MRS/ASM/AVS North Carolina Symposium, Raleigh, NC, Nov. 16th 2012.

 

S. K.Ojha, S.Iyer, L. Reynolds and T. Rawdanowicz, “Molecular Beam Epitaxy Growth of GaAsSb Heterostructure Nanowires”, MRS/ASM/AVS North Carolina Symposium, Raleigh, NC, Nov. 16th 2012.

A. Bowen, S. Iyer and L.R. Ram-Mohan, “A Study of GaInSbN/GaSb Epilayers and InAs/GaInSbN Superlattice by MBE for Long Wavelength IR Photodetectors”, NAMBE Conference at Stone Mountain Park, GA, Oct 15, 2012.

Nimai C Patra, Sudhakar Bharatan, Jia Li, Shanthi Iyer, "Growth, Characterization and Annealing Studies of InSbN Heterostructures grown by MBE for Long-Wavelength Detection", 29th North American Molecular Beam Epitaxy Conference, Stone Mountain Park, GA, Oct 14, 2012.

Shanthi. Iyer, Nimai Patra, Sudhakar Bharatan “Heteroepitaxial Growth of Dilute InSbN on GaAs by Molecular Beam Epitaxy for Long Wavelength Infrared Applications”, Chicago IL, USA, Sept 4, 2012, Invited Talk

Tanina Bradley, Robert Alston, Jay Lewis, Garry Cunningham, Shanthi Iyer,"The Effect of Deposition Conditions and Annealing Temperature on Gallium Tin Zinc Oxide Thin Film Transistors",  Poster presentation, MRS Fall meeting, Boston, Nov. 28 2011.

Nimai Patra, Shanthi Iyer,"A Study of MBE Grown InSb1-xNx Epilayers for LWIR  Applications", presented at 1st Annual COE Graduate Research Poster  Competition on 26th April 2012 at North Carolina A & T State University, Greensboro, NC, 27411. 

Nimai Patra, Sudhakar Bharatan, Jia Li, Michael L. Tilton and Shanthi Iyer, “Growth and Characterization of InSb1-xNx on GaAs for LWIR Applications”, Oral Presentation, 28th North American Molecular Beam Epitaxy (NAMBE) conference, San Diego, CA, Aug 14-17, 2011.

Nimai Patra, Sudhakar Bharatan, Jia Li and Shanthi Iyer, “Nitrogen Incorporation Studies in InSbN MBE Grown Epilayers”, Oral presentation, MRS North Carolina Symposium, Raleigh, NC, Nov 18, 2011.

Tanina Bradley, Robert Alston, Jay Lewis, Garry Cunningham, Shanthi Iyer,"The Effect of Deposition Conditions and Annealing Temperature on Gallium Tin Zinc Oxide Thin Film Transistors",  presented at 1st Annual COE Graduate Research Poster Competition on 26th April 2012 at North Carolina A & T State University, Greensboro, NC, 27411.

Nimai Patra, Sudhakar Bharatan, Jia Li, Shanthi Iyer and Michael L. Tilton, “ A Study of MBE Grown InSb1-xNx on GaAs for Long-Wavelength IR Applications”, Oral Presentation, 53rd Electronics Materials Conference and Exhibition, Santa Barbara, CA, June 23, 2011.

 

Shanthi Iyer, Kalyan Chakravarthy Nunna, Jia Li, & Sudhakar Bharatan,  “A Study of MBE Grown GaAsSbN/GaAs Single Quantum Wells for 1.55µm Emission”, 38th International Symposium on Compound Semiconductor, Berlin Germany, May 23, 2011

 

Adam Bowen, “The Properties of RF Sputtered ZnO:F Thin Films Deposited on Polyethylene Naphthalate and Glass Substrates”, FlexTech Alliance 2011 Flexible Electronics and Displays Conference and Exhibition, February, 2011

 

Robert Alston, “Device Characteristics of Thin Film Transistors with Gallium Tin Zinc Oxide Channel Layers”, FlexTech Alliance 2011 Flexible Electronics and Displays Conference and Exhibition, February, 2011

 

Vikas Sheoran  and Shanthi Iyer, “Nanostructured Photovoltaics with III-V Sub-Band-Gap”, Proceedings of the First International Conference on Green & Sustainable Technology:Research & Workforce Development,  Nov. 18, 2010,Greensboro,NC.

 

Tanina Bradley, Robert Alston., J. Lewis, Garry Cunningham and Shanthi Iyer, “Device Characteristics of Thin Film Transistors with Gallium Tin Zinc Oxide Channel Layers”, Selected for student oral presentation at MRS/AVS/ASM North Carolina symposium, November 19th 2010, Raleigh, NC.

 

Sudhakar Bharatan, Shanthi Iyer, Jia Li, “Investigation of Band Offsets in GaAsSb(N)/GaAs Strained Epilayers using X-ray Photoelectron Spectroscopy and Photoluminescence”, Poster Presentation, at MRS/AVS/ASM North Carolina symposium, November 19th 2010, Raleigh, NC.

 

Sudhakar Bharatan, Nimai Patra, Jia Li and Shanthi Iyer, A Study of MBE Grown InSb1-xNx Epilayers”, Poster Presentation, at MRS/AVS/ASM North Carolina symposium, November 19th 2010, Raleigh, NC.

S. Bharatan, S. Iyer, J. Li, T.A. Rawdanowicz, and L. Reynolds, “A Study of MBE Grown InGaAsSbN/GaSb Single Quantum Wells”, Poster Presentation, 27th NAMBE Conference, Breckenridge, CO,  September 26, 2010

Sudhakar Bharatan, Nimai Patra, Jia Li and Shanthi Iyer, “A Study of MBE Grown InSb1-xNx Epilayers”, Poster Presentation, 27th NAMBE Conference, Breckenridge, CO,  September 27, 2010

Sudhakar Bharatan, Shanthi Iyer, Jia Li and Kevin Matney, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid-Infrared Applications”, Oral Presentation, Electronic Materials Conference, June 24, 2010. Notre Dame, IN.

Shanthi Iyer, Sudhakar Bharatan, Jia Li and Thomas Rawdanowicz, MBE Growth of Mixed Dilute Nitride-Arsenide-Antimonide Quantum Wells for Mid-Infrared Applications”, North Carolina Nanotechnology Commercialization ConferenceMarch 31st 2010, , Koury Convention Center,Greensboro, NC

 

T. Bradley, R. Alston, S. Iyer, J. Lewis and G. Cunningham, Amorphous Gallium Tin Zinc Oxide Films and TFT Performance for Flexible Electronic Implementation”, North Carolina Nanotechnology Commercialization Conference, March 31st-April 1st 2010, Koury Convention Center,Greensboro, NC, Awarded 1st place in Poster Presentation.

 

T. Bradley, R. Alston,  J. Lewis, G. Cunningham, A. Indluru, T.L. Alford and  S. Iyer, “Amorphous Gallium Tin Zinc Oxide Films and TFT Performance”, 9th Annual Flexible  Electronics and Displays Conference, Feb. 4, 2010, Phoenix, AZ.

 

A. Bowen, J. Li, J. Lewis, K. Sivaramakrishnan, T.L. Alford, E. W. Forsythe & S. Iyer, “Properties of Transparent Conducting ZnO:F Films on Glass and PEN Substrates Deposited by RF Sputtering”, Poster Presentation NC State MRS Conference, November 20, 2009.

Sudhakar Bharatan, Shanthi Iyer, Jia Li and Kevin Matney, MBE Growth and Properties of InGaAsSbN/GaSb Single Quantum Wells”, Poster Presentation, ASM/MRS-NC Meeting, Raleigh, NC November 20th 2009,.

R.Alston1, T. Bradley, Jon Poe, S. Iyer, G. Cunningham, J. Lewis, and E.W. Forsythe, “OLED Degradation Testing and ZnO TFT”, BCE Ann Rev Meeting, Durham, NC April 7, 2009

 

S. Potoczny, K.Lewis, C. Prince, C. Johnson, “Backbone of the Mobile World is Getting Thin and Flexible: Automated Bend Testing System for Flexible Displays”, BCE Ann Rev Meeting, Durham, April 7, 2009

 

A. Bowen, S. Potoczny, J. Li, K. Sivaramakrishnan, T. Alford, J. Lewis, E. W. Forsythe & S. Iyer, “Deposition of Transparent Conducting ZnO:F Films on PEN Substrates by RF Sputtering”, BCE Ann Rev Meeting, Durham,  April 7, 2009

 

A. Bowen, S. Potoczny, J. Li, K. Sivaramakrishnan, T. Alford, J. Lewis, E. W. Forsythe & S. Iyer, “Deposition of Transparent Conducting ZnO:F Films on PEN Substrates by RF Sputtering”, 2009 Flexible Electronics Display Conference, Feb.3-7, 2009

 

S. Potoczny, A. Bowen, J. Li, K. Sivaramakrishnan, T. Alford, J. Lewis, E. W. Forsythe & S. Iyer,  “Properties of RF Sputtered Transparent Conducting ZnO:F Films”, MRS Fall Meeting, Boston, Dec. 2, 2008.

 

A. Bowen, S. Potoczny, J. Li, K. Sivaramakrishnan, T. Alford, J. Lewis, E. W. Forsythe & S. Iyer, “The Electrical, Optical, Structural and Mechanical Properties of ZnO:F Thin Films Deposited onto Polyethylene Napthalate and Glass”, Selected for oral presentation at ASM/MRS NC section meeting, NCSU, Raleigh  Nov.8, 2008.

 

Sudhakar Bharatan, Shanthi Iyer, and Jia Li, “MBE Growth and Characterization of GaSbN and InGaAsSbN Single Quantum Wells”, Poster Presentation, MRS- NC Section Conference, Nov. 14, 2008.

 

H. Han, S. Iyer, J. S. Lewis, and T. L. Alford(P), “Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical and Optical Properties of Indium Tin Oxide on Plastic Substrates”, Materials Research Society Spring Meeting 2008.

 

Sudhakar Bharatan, Shanthi Iyer, Jia Li, Liangjin Wu, Kevin Matney, Jason Reppert, Apparao Rao, “MBE Grown Dilute Nitride Alloys of GaAsSbN Lattice-Matched to GaAs and GaSbN Quantum Wells,” Electronic Materials Conference, Santa Barbara, California, June 27, 2008.

 

S. Potoczny, A. Bowen, J. Li, S. Iyer, J. Lewis, E. W. Forsythe, & T. Alford, “Properties of RF Sputtered Transparent Conducting ZnO:F Films”, BCE Review Annual Meeting, March 19,2008.

 

T. Bradley, A. Bowen, S. Iyer, and J. Lewis,”The Influence of Processing Parameters on the Properties of Self Assembled Monolayers”, BCE Review Annual Meeting, March 19, 2008.

 

S. Iyer, L.Wu, K. Gibson, Jia Li, J. Lewis, S. Grego, J. Reppert and A.Rao, “The Study of Low Temperature Growth of III-V Nitrides for Flexible Display Applications”,   7th Annual Flexible Electronics  & Display Conference, Phoenix , AZ 01/23/08.

 

Kalyan Nunna S. Iyer, S.Bharatan, Jia Li and W.Collis, “GaAsSbN Single Quantum Well LED and Lasers near 1.6 μm Wavelength Region” was placed 2nd in the poster presentation in the MRS AVS ASM NC Symposium held at NCSU, Nov. 16, 2007.

 

T. Bradley, A. Bowen, S. Iyer & J. Lewis, “The Influence of Processing Parameters on the Properties of Self Assembled Monolayers” MRS NC Section Meeting, Raleigh, NC, Nov.16, 2007.

 

Sudhakar Bharatan, Shanthi Iyer, Kalyan Nunna, Ward J. Collis, Kevin Matney, Jason Reppert, Apparao M. Rao, Structural, optical and vibrational properties of lattice-matched GaAsSbN/GaAs grown by molecular beam epitaxy and their annealing effects,  Selected for student oral presentation at MRS/AVS/ASM North Carolina symposium, Nov. 16, 2007, Raleigh, NC.

 

L. Wu, S. Iyer, K. Gibson, and J. Li , J. Lewis, J. Reppert and A. M. Rao, “ Surface Morphology and Optical Properties of Low-Temperature Growth of III-V Nitrides for Organic/Inorganic Devices in Flexible Display Applications”,  MRS NC Section Meeting, Raleigh, NC, Nov.16, 2007.

 

Sudhakar K. Bharatan, Shanthi Iyer, Kalyan C. Nunna, Ward J. Collis, Kevin Matney, Jason Reppert, and Apparao M. Rao, “Annealing Effects of MBE Grown Lattice-Matched GaAsSbN on GaAs”, Poster presentation, North American Conference on Molecular Beam Epitaxy Sept 2007, Albuquerque, NM.

 

S. Bhagat, K. Lee, S. Iyer, J. Lewis, S. Grego, and T. L. Alford, “Mechanical Properties of Indium Tin Oxide on Polyethylene Napthalate Substrates”,’ Materials Research Society Spring Meeting 2007.

 

Kalyan Nunna, S. Iyer, Jia Li and W.Collis, ”Effect of N Incorporation on the Photoluminescence Characteristics of GaAsSb(N)/GaAs Single Quantum Well Structures and Light Emitting Device Beyond 1.55 mm”, 2007 NSTI Nanotechnology Conference and Trade Show, May 20-24, 2007, Santa Clara, California, U.S.A.

 

Sudhakar Bharatan, Shanthi Iyer, W.Collis, Kevin Matney, Jason Reppert, and Apparao M. Rao,  “Study of GaAsSbN/GaAs Lattice Matched Layer and Effects of Annealing on the Structural and Optical Characteristics”, 2007 NSTI Nanotechnology Conference and Trade Show, May 20-24, 2007, Santa Clara, California, U.S.A.

 

L.Wu, S. Iyer, S. Potoczny and K. Matney, “Effects of N Incorporation on the Photoluminescence and Structural Characteristics of GaSb:N/GaSb Single Quantum Wells”, 2007 NSTI Nanotechnology Conference and Trade Show, May 22, 2007, Santa Clara, California, U.S.A.

 

S.Potoczny, K.Lewis, C.Prince, and C.Johnson, “Mobile World is Getting Thin Flexible: Automated Bend Testing System”, BCE Annual Rev. 07, ARO, RTP, March 21, 2007

 

H. Han, Yeongseok Zoo, K. Lee, S. Iyer, J. S Lewis, S. Grego and T.L. Alford, “Influence of Processing Parameters and Defects on the Electrical and Optical Properties of ITO Films on PEN Substrates” Flexible Displays and Microelectronics Conference, Phoenix, AZ Feb6-8,2007

 

Shekhar Bhagat, Kenneth Lee, Shanthi Iyer, Jay Lewis, Sonia Grego, and T. L. Alford “Effect of Deposition Parameters on the Mechanical Integrity of ITO Films on PEN”, Flexible Displays and Microelectronics Conference, Phoenix, AZ Feb6-8,2007

Liangjin Wu, Kellen Gibson, Shanthi Iyer, and Jia Li, “Optimization of the Low-Temperature Growth of III-V Compound Semiconductors for Organic/Inorganic Hybrid Devices Application Mater”, Res. Soc. Fall Meeting – Nov. 30, 06

Sudhakar K. Bharatan, Kalyan Nunna, Shanthi Iyer, Jia Li, Ward J Collis, and William C Mitchel, “Investigation of Band Lineup in GaAsSb(N)/GaAs Strained Epilayers using X-ray Photoelectron Spectroscopy and Photoluminescence”, Mater. Res. Soc. Fall Meeting – Nov.30, 06

Sudhakar Bharatan, Shanthi Iyer, Ward J. Collis, Kalyan Nunna, Jia Li, Kevin Matney, Jason Reppert, and Apparao M. Rao, “A Study of MBE Grown GaAsSbN Epilayers Lattice Matched to GaAs”, North Carolina Section of the MRS and Carolinas Central Chapter of ASM International Meeting, Raleigh, NC, Nov. 2006

Liangjin Wu, Shanthi Iyer, Kellen Gibson, Jia Li, and  Jay Lewis, “Optimization of the Low-Temperature Growth of III-V Compound Semiconductors for Organic/Inorganic Hybrid Devices Application”, North Carolina Section of the MRS and Carolinas Central Chapter of ASM International Meeting, Raleigh, NC, Nov. 2006

 

Liangjin Wu, Shanthi Iyer, Stan Potoczny, Kevin Matney and Rohan Sethi, “Effects of N Incorporation on the Photoluminescence and Structural Characteristics of GaSbN/GaSb Single Quantum Wells”, North Carolina Section of the MRS and Carolinas Central Chapter of ASM International Meeting, Raleigh, NC, Nov. 2006

Kalyan Nunna, S. Iyer, L. Wu, Jia Li , S. Bharatan, W. Collis and X.Wei, “Optical Properties and Electroluminescence of GaAsSbN/GaAs Single Quantum Well Heterostructures Grown by MBE”,  Selected for Student Oral Presentation, North Carolina Section of the MRS and Carolinas Central Chapter of ASM International Meeting, Raleigh, NC, Nov. 2006

 Kalyan Nunna, S. Iyer, Liangjin Wu, Jia Li, Sudhakar Bharatan, W.Collis, K.K. Bajaj, R.T.Senger, X. Wei, “Optical Studies of MBE Grown GaAsSbN/GaAs Single Quantum Well Structures”, Poster Presentation, North American MBE Conference 2006, Durham, NC

 Sudhakar Bharatan, Shanthi Iyer, Ward J. Collis, Kalyan Nunna, Jia Li, Liangjin Wu, Kevin Matney,Jason Reppert, Apparao M. Rao,A “Study of MBE Grown GaAsSbN Epilayers Lattice Matched to GaAs”, Poster Presentation, North American MBE Conference 2006, Durham, NC

 

Kellen Gibson “Low temperature III-V Materials Investigated by MBE”, at “FY05 Center of Excellence for Battlefield Capability Enhancements” Meeting at Army Research Office, Research Triangle Park, NC, March 24, 2006.

 

Kellen Gibson, Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Sudhakar Bharatan and  Jia Li, “Low-temperature growth of GaAs polycrystalline film for organic/inorganic hybrid devices application”,  IMAP Carolinas, March 2006.

 

Sudhakar Bharatan, Shanthi Iyer, Kevin Matney, Ward J. Collis, Kalyan Nunna, Jia Li, Liangjin Wu, Kristopher McGuire, “Photoluminescence and High Resolution X-Ray Diffraction Study of MBE Grown GaAsSbN Epilayers Lattice Matched to GaAs for Tandem Solar Cell Applications”, Poster presentation, IMAPS Carolinas, March 2006.

 

Kalyan Nunna, Shanthi Iyer, Liangjin Wu, Sudhakar Bharatan, Jia Li, Ward J Collis, Krishan Bajaj, Tugrul Senger, Xing Wei,Study of GaAsSbN/GaAs Single Quantum Well Structures”, Poster Presentation, Scientific Symposium and Exhibition on Microelectronics”, Hosted by the IMAPS Carolinas Chapter and the IEEE CPMT NC Local Chapter, Raleigh, NC, 9 March 2006.

 

Kalyan Nunna, Shanthi Iyer, Liangjin Wu, Sudhakar Bharatan, Jia Li, Ward J Collis, Krishan Bajaj, Tugrul Senger, Xing Wei, “Nitrogen Incorporation Studies of GaAsSbN/GaAs Single Quantum Well Structures by Molecular Beam Epitaxy”, Oral Presentation, Materials Research Science Conference, Fall 2005, Boston, MA.125 Dec 2005

 

Kellen Gibson, Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Sudhakar Bharatan and  Jia Li, “Low-Temperature Growth of GaAs Polycrystalline Film for Organic/Inorganic Hybrid Devices Application”, Material Research Society North Carolina Symposium, November 11, 2005

 

Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Sudhakar Bharatan, Jia Li, Ward J. Collis, “A Study of GaAsSbN/GaAs SQWs for 1.55 mm Emission”, Fifth Annual Fitzpatrick Center Symposium of Duke University, Durham, May (2005) - Third place in student poster presentation contest.

 

Sudhakar Bharatan, Shanthi Iyer, Kalyan Nunna, Ward J. Collis, Jia Li, Liangjin Wu, Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications”, Poster presentation, Material Research Society- North Carolina Symposium, Nov 11, 2005.

 

Sudhakar Bharatan, Shanthi Iyer, Kalyan Nunna, Ward J. Collis, Jia Li, Liangjin Wu, Kevin Matney, Kristopher McGuire, “Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications” Poster presentation, MRS Fall Meeting, Symposium EE, Nov 2005.

 

Kalyan Nunna, Shanthi Iyer, Liangjin Wu, Sudhakar Bharatan, Jia Li, Ward J Collis, Krishan Bajaj; Tugrul Senger, Xing Wei, Nitrogen Incorporation Studies of GaAsSbN/GaAs Single Quantum Well Structures” North Carolina Section of the MRS and Carolinas Central Chapter of ASM International Meeting, Raleigh, NC. 14 November 2005.

 

Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Sudhakar Bharatan, Jia Li, and Ward J. Collis, “Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs” presented at the MRS Spring Meeting, San Francisco, CA, Mar. 30, 2005.

 

Shanthi Iyer, “MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells” International Conference on Polymer, Blends, Composites, IPNS and Gels: Macro to Nano scales, Kottayam, India, March 21-23, 2005.

 

Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis, “GaAsSbN/GaAs Single Quantum Wells Growth by MBE”, The Fourth National Ronald E. McNair Symposium on Science and Technology Frontiers, Greensboro, NCA&T, Jan 27, 2005.

 

J. Li, S. Iyer, S. Bharatan, L. Wu, K. Nunna, W. Collis, “Carrier Localization Study in GaAsSbN Single Quantum Wells”, The Fourth National Ronald E. McNair Symposium on Science and Technology Frontiers, Greensboro, NCA&T, Jan 27, 2005

 

Trinity Biggerstaff, Shanthi Iyer, Nathan G Stoddard, Stephen J. Pennycook and Gerd Duscher, “Atomic Characterization of Annealed Quantum Wells” ASM/MRS conference in RTP Nov. 2004.

 

Trinity Biggerstaff, Shanthi Iyer, Nathan G Stoddard, Stephen J. Pennycook, and Gerd Duscher, “Atomic Characterization of Annealed Quantum Wells” Appalachian Regional Electron Microscopy Society Conference, Boone, NC, Oct. 2004.

 

.K. Nunna, S. Iyer, L. Wu, J. Li, S. Bharatan, W. Collis, “MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells”,  North American MBE  Conf., Canada, Oct. 2004.

 

Jia Li, Shanthi Iyer, Sudhakar Bharatan, Liangjin Wu, Kalyan Nunna, and Ward Collis, “Annealing Effects on the Temperature Dependence of the Photoluminescence of GaAsSbN Single Quantum Wells”, presented in MRS International Workshop on Nitride Semiconductors, Meeting 2004, Pittsburg. PA. July 2004.

 

S. Bharatan, W. Collis, S. Iyer, J. Li, K. Nunna, L. Wu, and K. Matney, “Study of GaAsSbN Alloys for Solar Cell Applications,” presented at the HBCUs/OMUs Research Conference, NASA Glenn Research Center, Cleveland, OH (July 14-15, 2004).

 

Trinity Biggerstaff, Gerd Duscher, Stephen J. Pennycook, Nathan G Stoddard ,and Shanthi Iyer, “Atomic Characterization of Annealed Quantum Wells” ASM/MRS conference in RTP and the Appalachian Regional Electron Microscopy Society Conference in Boone, NC.

 

Jia Li, Shanthi Iyer, Sudhakar Bharatan, Liangjin Wu, Kalyan Nunna, Ward J Collis, “Annealing Effects on the Temperature Dependence of the Photoluminescence of GaAsSbN Single Quantum Wells” presented in MRS International Workshop on Nitride Semiconductors Meetings, Boston, MA 2004.

 

Liangjin Wu, Kalyan Nunna, Jia Li, Sreenivasa Kothamasu, Ward Collis, Shanthi Iyer,  Kevin Matney, K. Bajaj, “MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells”  presented at MRS Fall Meeting, Boston, MA 2003.

 

Jia Li, Sudhakar Bharatan, Kalyan Nunna, Liangjin Wu, Shanthi Iyer,  K. Bajaj,  “Carrier Localization in GaAsSbN/GaAs Quantum Wells” Presented at MRS Fall Meeting 2003.

 

David L. Jones, Shanthi Iyer, Liangjin Wu, Jia Li, Ward Collis, S. M. Hegde, Kevin Matney, K. K. Bajaj  and R.T. Senger “MBE Growth and PL Studies of GaAsSb/GaAs And GaAsSbN/GaAs Quantum Well Heterostructures” APS March Meeting, Austin, TX March 3, 2003.

 

Liangjin Wu, David Jones, Jia Li, Sreenivasa Kothamasu and Shanthi Iyer, “A Study of Low Melting Temperature Interlayers for Strain Relaxation ”, APS March Meeting, Austin, TX, March 3, 2003.

 

Sreenivasa Kothamasu, Jia Li , Liangjin Wu, David Jones, Kalyan Nunna  and Shanthi Iyer, “Characterization of GaAs1-xSbxN/GaAs Quantum Well Heterostructures Grown by Molecular Beam Epitaxy using High Resolution X-Ray Diffraction”, Ron McNair Symposium on Science and Technology Frontiers,  Jan. 28, 2003.

 

David Jones, Liangjin Wu, Jia Li, Sreenivasa Kothamasu, Ward Collis, and Shanthi Iyer “MBE Growth and Properties of GaAsSb/GaAs Quantum Wells” ,  Ron McNair Symposium on Science and Technology Frontiers  Jan. 27, 2003.

 

Liangjin Wu, David Jones, Jia Li , Sreenivasa Kothamasu and Shanthi Iyer, “A Study of Low Melting temperature Interlayers for Strain Relaxation in the Growth of GaSb on GaAs”,  Ron McNair Symposium on Science and Technology Frontiers  Jan. 27, 2003.

 

Liangjin Wu, D. Jones, Jia Li, Sreenivasa Kothamasu, S. Iyer, “A study of low melting temperature interlayers for strain relaxation in the growth of GaSb on GaAs”, MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina,  November 15, 2002.

David Jones, Liangjin Wu, Jia Li, Sreenivasa Kothamasu, Ward Collis, and Shanthi Iyer “MBE Growth and Properties of GaAsSb/GaAs Quantum Wells” presented at MRS NC Section Meeting, MCNC, NC, Nov. 15, 2002.

 

D. Jones, S. Iyer, “A Novel Approach to Lattice Engineered Substrate” Mat. Res. Soc. Spring Meeting, April 17, 2001

 

S. Iyer, D. Jones and R. Dawson, “MBE Growth of GaSb on GaAs with InSb Interlayer”, Amer. Phys. Soc. Spring Meeting, San Francisco, CA, April 16, 2001

 

S. Iyer, S. Mulugeta, W. Collis, K.K. Bajaj, G. Coli “Photoreflectance Studies of Te-Doped GaSb”, American Physical Society Spring Meeting, Minneapolis, MN, March 23, 2000

 

S. Iyer, S. Mulugeta, K.K. Bajaj, J. Li, S. Venkatraman and B. Mangalam, “ Characterization of Te-Doped GaSb at the Spin-Orbit Split Transition using Electro Modulation Spectroscopy”, American Physical Society Spring Meeting, Los Angeles, CA, March 17, 1998.

 

Thomas A. Rawdanowicz, S. Venkatraman, Jie Li and S. Iyer, “MBE Growth and Characterization of Undoped and Doped InSb Epilayers Grown on GaAs Substrates”, (One of the two selected students for oral presentation) presented at the MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 21, 1997 .

 

S. Mulugeta, I. Sezanayev, S. Venkatraman, J. Li, and S. Iyer, “Characterization of Te-Doped GaSb at the E0+D0 Transition using Electromodulation Spectroscopy”, presented at the MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 21, 1997.

           

D. Johri, J. Li and S. Iyer, “Calibration of Substrate Temperature and the Source Fluxes in the     

MBE System”, MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 22, 1996

 

S. Mulugeta, J. Li and S. Iyer, “Low Temperature Photoreflectance of GaSb”, MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 22, 1996

 

S. Venkatraman, J. Li, T. Rawdanowicz, S. Iyer, A. Rice and S. Hegde, “Characterization of (001) GaSb MBE grown epilayers, MRS-NC Section Annual Symposium”, Microelectronics Center of North Carolina, November 22, 1996

 

S. Iyer, Shahnaz Chowdhury - Nagle, Jie Li, and K.K. Bajaj "Theoretical Study of InTlSb/InAsSb Superlattice for Far Infrared Detector", APS March Meeting, St. Louis,  MO, March l9, 1996.

 

Shahnaz Choudhury - Nagle, S. Iyer and Jie Li, “Computation of Energy sub-bands in InTlSb/InAsSb using the modified formalism for the Kronig - Penney models”, MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 10, 1995.

 

Badri Mangalam, Devona Faulk, S. Iyer and Jie Li, “Modulation Photoreflectance of Semiconductors” MRS-NC Section Annual Symposium, Microelectronics Center of North Carolina, November 10, 1995.

 

S. Iyer, R. Parakkat, B. Patnaik, N. Parikh  and S. Hegde, "A Study of the Ion Implantation Damage and Annealing Behavior in GaSb", TMS Annual Meeting, Las Vegas, Nevada, Feb.14, 1995.

 

B. Mangalam, R. Chowdhury, R. Bhandari, B. Patnaik, S. Iyer, and J. Narayan, "TEM and RBS Study of Te-Implanted GaSb", MRS meeting, RTP, NC,  November 18,1994.

 

S. Iyer, G. Qiu and L. Small, "Low Temperature PL Characteristics of Te-Doped LPEE Grown GaSb and Devices" APS meeting, Pittsburgh, Pennsylvania, March 24, 1994.

 

S. Iyer, "Growth and Characterization of GaSb and GaInAsSb by LPEE", Science and Technology Alliance Materials Conference, NCA&T State University, October 27, 1993.

 

R. Parakkat, B. V. Mangalam and S. Iyer et al, "Damage and Annealing of Te-Implanted GaSb", Materials Conference, NCA&T State University, October 29, 1993.

 

Gaojun Qiu, Jensheng Huang and S. Iyer, "Schottky Barrier on LPEE Grown n-GaSb Layers", Materials Conference, NCA&T State University, October 29, 1993.

 

Lori Small, S. Iyer S. Hegde, "Low Temperature PL Spectral Analysis of LPEE Grown Te-doped GaSb and GaInAsSb Layers", Materials Conference, NCA&T State University, October 29, 1993.

 

S. Iyer, "Photoluminescence Study of LPEE Grown GaInAsSb epilayers on GaSb", American Physical Society Spring Meeting, Seattle, Washington, March (1993).

 

L. Small and S. Iyer, "Computer Simulation of Space-Charge-Limited I-V Characteristics", Proc. of 3rd Annual Symposium on CSA, Greensboro, NC, p.294-7 (1992).

 

L. Small and S. Iyer, "Photoluminescence Spectral Analysis of GaInAsSb Semiconductor Layers, Proc. of 3rd Annual Symposium on CSA, Greensboro, NC, p.527-30 (1992).

 

D.L. Simpson, S. Iyer, and A. Abul-Fadl, "Liquid Phase Electroepitaxial (LPEE) Growth and Photoluminescence Characterization of Undoped GaInAsSb (2.25mm) at 530°C", Proc. of 3rd Annual Symposium on CSA, Greensboro, NC, p. 525-6 (1992).

 

S. Iyer, A. Abul-Fadl, S. Vaddi, and W.J. Collis, "Photoluminescence Study of LPEE Grown GaInAsSb Epilayers on GaSb", Proc. of 2nd Annual Symposium on CSA, Greensboro, NC, p.53-6 (1991).

 

C. Durham, A. Abul-Fadl, and S. Iyer, "Photoluminescence/Photoreflectance Data Acquisition", Proc. of 2nd Annual Symposium on CSA, Greensboro, NC, p.106-107  (1991).

 

S. Vaddi, S Iyer and A. Abul-Fadl, "LPEE Growth of GaInAsSb System", Proc. of 2nd Annual Symposium on CSA, Greensboro, NC, p.108-109 (1991).

 

R. Cardona, S. Iyer, and A. Abul-Fadl, "Photoreflectance as an Optical Characterization Tool", Proc. of 2nd Annual Symposium on CSA, Greensboro, NC, p.58 (1991).

 

Jonathan Lewis, S. Iyer, Ali Abul-Fadl and W. Collis, "Liquid Phase Electroepitaxial Growth and Characterization of InGaAsSb lattice Matched to (100) GaSb in the 1.7 to 2.3mm", Proc. of 1st Annual Symposium on CSA, Greensboro, NC, p.57 (1990).

 

Keith L. Whittingham, Shanthi N. Iyer and Albert T. Macrander, "A Study of Current‑Voltage Characteristics in Multilayer InP Structures", Proc. of the First Annual Symposium on CSA, NCA&TSU 58 (1990).

 

S. Iyer, A.T. Macrander, R.F. Karlicek and S. Lau, "Space Charge Limited Conduction in InP: Fe with Multitrap Levels", Proc. of the First Annual Symposium on CSA, NCA&TSU, 53‑57 (1990).

 

S. Iyer, A.T. Macrander, R.F. Karlicek, Jr. and S. Lau, “Semi‑insulating Properties of Fe‑Doped InP Grown by Hydride VPE", Presented at The Electrochemical Society Meeting, SOTAPOCS XI session, Hollywood, FL (Oct. 16, 1989).

 

Jonathan Lewis and S. Iyer, "Liquid Phase Electroepitaxial Growth of InGaAsSb on (100) GaSb", MRS Meeting, RTP, NC, Nov. 21, (1989).

 

S. Iyer, "Properties of Undoped and Mn‑Doped InGaAsP Grown by LPEE", International Conference on Thin Films, New Delhi, India (Dec. 7, 1987).

 

S.Iyer, W.Collis "Study of Thermal and Light Induced Changes in Amorphous Silicon Alloy Materials”, SERI PVAR D 7th Review Meeting, Denver, CO (May 1986).

 

S. Iyer, E.K. Stefanakos, A. Abul-Fadl and W.J. Collis "CCLPE Growth and Characterization of InGaAsP", Presented at the ACCG‑6/ICVGE‑6 Conference, Atlantic City, New Jersey, July 20, 1984.

Other Presentations

Shanthi Iyer, Tanina Bradley, Robert Alston, Ward Collis, Olanrewaju Ogedengbe, Jay S. Lewis, Garry Cunningham, “The Effects of Deposition Conditions and Annealing Temperature on the performance of Gallium Tin Zinc Oxide Thin Film Transistors”, SPIE Photonics West 2013, Feb 5, 2013, Invited Paper

 

Shanthi Iyer, “MBE Growth of Dilute Nitride based Nanostructures, NWs and Amorphous Oxide based Thin Film Transistor Research at NCA&TSU”, MRS/ASM/AVS North Carolina Symposium, November 16th, 2012, Invited Talk

 

S.Iyer, “N Incorporation in GaAsSb, GaSb and InSb by Molecular Beam Epitaxy”, Nanoelectronics, Nano-Magnetism and Nanosystems, Nano-S & T Nanoscience and Nantechnology 2012,  Qingdao , China, Oct 26, 2012, Invited Talk

 

S.Iyer, “Environmentally Stable Flexible Displays & Transparent Oxide TFTs”,

AMRDEC HBCU/MI Exchange Meeting at Prairie View A&M University, Aug. 16, 2012, Invited Talk.

 

S. Iyer, “Dilute Nitrides & Flexible Electronics Research at NCA&TSU” @ Ohio State University College of Engineering, June 2, 2010.

 

S. Iyer, “Center of Excellence for Battlefield Capability Enhancements - Environmentally Stable Flexible Displays @ 5th Annual Review Meeting held at Army Research Office, RTP, NC, April 7, 2009.

 

S. Iyer, “Flexible Displays and Dilute Nitrides Research “@Army Research Laboratory, Adelphi, MD, March 23rd, 2009.

 

S. Iyer, “Center of Excellence for Battlefield Capability Enhancements - Environmentally Stable Flexible Displays @ 4th Annual Review Meeting held at Army Research Office, RTP, NC, March 26, 2008.

 

S. Iyer,“Molecular Beam Epitaxial Growth of Dilute Nitride Materials for Optoelectronic Device Applications”, Indian institute of Technology, Bombay, India, Dec. 12,, 2007

 

S. Iyer, “ Center of Excellence for Battlefield Capability Enhancements - Environmentally Stable Flexible Displays and Dilute III-V Dilute Nitride based Optoelectronic Devices” @ Aviation and Missile Research Development and Engineering  Center, Redstone Arsenal, Alabama, April 12, 2007

 

S. Iyer, “Center of Excellence for Battlefield Capability Enhancements - Environmentally Stable Flexible Displays @ 3rd Annual Review Meeting held at Army Research Office, RTP, NC, March 21, 2007

 

S. Iyer,Molecular Beam Epitaxial Growth and Photoluminescence Characteristics of GaAsSbN/GaAs Quantum Well Heterostructures” Keynote Speaker in International Workshop on Science and Applications of Nanostructured Materials, Puttabharathi, India, Nov.30, 2006

S. Iyer, “MBE Growth and Characterization of Strained GaAsSbN Quantum Wells and Epilayers Lattice Matched to GaAs”, Army Research Laboratory, Adelphi., MD, May 18th, 2006.

Shanthi Iyer, Environmentally Stable Flexible Displays” at “FY05 Center of Excellence for Battlefield Capability Enhancements” Meeting at Army Research Office, Research Triangle Park, NC, March 24, 2006.

 

Shanthi Iyer Center of Excellence for Battlefield Capability Enhancements:  Environmentally Stable Flexible Displays and Work at NCA&TSU on III-V Nitrides” at Flexible Display Center at Phoenix, AZ, Sept. 16, 2005.

 

S. Iyer  “Environmentally Stable Flexible Displays” at “FY04 Center of Excellence for Battlefield Capability Enhancements” Meeting at Army Research Office, Research Triangle Park, NC, Jan.21, 2004.

 

S. Iyer  “Characterization of GMR Films: SQUID” at High-Density Three-Dimensional Packaging Technology for Giant Magnetoresistive Memory Devices-Design Review/ Working Meeting at College of William and Mary, May 23, 2003.

 

S. Iyer “Compliant Substrates for MWIR” at Progress in Semiconductor Detectors Conference sponsored by AFOSR at Williamsburg, VA 4th Jun.2001

 

S.Iyer, “Research at NCA&TSU on Antimonide Based Compound Semiconductors” Invited Speaker at NC Section of the MRS, MCNC Nov.10, 2000.

 

S. Iyer, “Growth of Sb Based Compounds and Characterization, AFOSR Program Review, Dayton, Ohio, 29th Sept. 1999.

 

S. Iyer, “Electrical Properties of MBE Grown Undoped and Doped InSb/GaAs using SnTe Source”, - MBE User’s Group Meeting, NIST, Gaithersburg, MD, 27th Oct. 1998.

 

S. Iyer, “Antimonide Based materials”, AFOSR Electronic and Optical Materials Review/Workshop, Wright -Patterson AFB, OH,  August 23, 1996.

 

S. Iyer, “Antimonide Growth”, FAST IR Sensor Technology Center (FIRST) Program Review, NM, Albuquerque, March 19, 1996.

 

S. Iyer, "Status of NC A&T SU's New Projects on MBE of Sb Based III-V Alloys: Direction, Needs, Concerns" - Twelfth Baltimore-Washington MBE User's Meeting, NIST, Gaithersburg, MD, Nov. 10, 1993.

 

S. Iyer, "LPEE Growth & Characteristics of GaInAsSb alloys", Invited Speaker at Emory University,  Feb. 27 (1992)

 

S. Iyer, "LPEE Growth & Photoluminescence Characteristics of GaSb & GaInAsSb alloys", Wright Patterson Laboratory, June (1991)

 

S. Iyer, "The GaInAsSb System: Key Properties for Opto- Electronic Device Applications" NCA&TSU, Department of Electrical Engineering, Faculty Seminar Series, Dec. 5, 1990.

 

S. Iyer, “LPEE Growth & Characterization of GaInAsSb", 1st HBCU Meeting on  PMMS' 90, Howard University, Washington, May 16, (1990)

 

S. Iyer, "Semi‑Insulating Properties of Fe‑Doped InP Grown by Hydride VPE", AT&T Bell Labs, Murray Hill, NJ, Aug. 10, 1988.

 

S. Iyer, “Growth and Characterization of InGaAsP by LPEE", AT&T Bell Labs, Murray Hill, NJ, May 11, 1988.

 

.

Ph.D. Dissertations Supervised (10):

 

Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy”,  Pavan Kumar Kasanaboina, 04/16 (Currently at Intel).

Self-Catalyzed growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors”, Sai Krishna Ojha, 04/15.     

“A Study of GSZO TFTs for Fabrication on Plastic Substrates”, Robert Alston, 06/14 (Currently at Intel).

 

 “Study of InAs/Ga(In)Sb and InAsN/Ga(In)Sb Superlattices by MBE for Very Long Wavelength Infrared Photodetectors”, Adam S. Bowen , 12/2013 (Currently at US Patent Office).

 

 “Study of N Incorporation in InSb on GaAs by Molecular Beam Epitaxy for Long Wavelength Infrared Devices “, Nimai Chand Patra ,04/13 (Currently at Intel).

 

“The Effect of Deposition Parameters on the Performance of RF Sputtered GSZO Thin Film Transistors “, Tanina Bradley, 04/12 (Currently at North Carolina Central University).

 

"MBE Growth of Lattice-Matched GaAsSbN/GaAs and InGaAsSbN/GaSb Quantum Wells for Optoelectronic Devices”, Sudhakar Bharatan, 06/09 (Currently Associate Professor, India).

 

“Effects of N Incorporation on the Properties of GaAsSbN Single Quantum Wells and Light Emitting Devices in the 1.55 μm Wavelength Region”, Kalyan Nunna, 12/07 (Currently at Qorvo).

 

"MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Well Heterostructures", Liangjin Wu, 06/05 (Currently at Qorvo).

 

“The Effects of Dopants on the Dielectric Constants of Tantalum Pentoxide Thin Films using PLD”, Vendetta Knight, 06/04.

 

 

Master's Thesis Supervised:

 

 

“High Performance Gallium Tin Zinc Oxide Thin Film Transistors by RF Magnetron Sputtering”, Ngoc Huu Nguyen, 04/15
 

“Micro-Photoluminescence (m-PL) Study of Core-Shell GaAs/GaAsSb Nanowires grown by Self-Assisted Molecular Beam Epitaxy”, Md Shifat Us Sami, 04/15

“Vapor-Liquid-Solid Growth Mechanism for Self-Assisted GaAs Nanowires” Prithviraj Deshmukh, 08/2014

“A Study of Electrical and Optical Stability of GSZO Thin Film Transistors” Briana McCall, 06/14


“The Theoretical Simulation of InAs/GaInSb and InAsN/GaInSb Strained Layer Superlattice Band Gaps”, Michael Donnell Chestnut II, 12/2013
 

“Capacitance-Voltage Characterization of Gallium Tin Zinc Oxide (GSZO) Thin Film Transistors”, Olanrewaju Sunday Ogedengbe, 10/2012

“Development of Theoretical Modeling and an Optical Characterization System for Photodetectors in the 8-12 μm Wavelength Region”, Jonathan Poe, 01/2012


“Transfer Length Measurements for Varied Metallization Options and Transistor processing for Gallium Tin Zinc Oxide (GSZO) TFTs”, Shereen Farhana, 06/2011.
 

“RF-Sputtered Gallium Tin Zinc Oxide Films and Thin Film Transistors”, Robert Alston, 07/2010.
 

“The Structural and Electrical Properties of RF sputtered ZnO:F thin films deposited on polyethylene naphthalate and glass”, Adam Bowen, 04/09.
 

“The Optical and Mechanical Properties of ZnO:F Thin Films Deposited Onto Polyethylene Napthalate and Glass”, Stanley Potoczny, 12/08
 

“A Preliminary Investigation of Low Temperature Growth of III-V Compound Semiconductor Materials and Growth of Self-Assembled Monolayer Materials for Hybrid Organic Light Emitting Diode Applications”, Kellen Gibson, 07/06
 

“X-ray Diffraction Study of GaAsSb/GaAs and GaAsSbN/GaAs Quantum Well Heterostructures”, Sreenivasa Kothamasu, 11/03
 

“Characterization of NiFe/Cu/Co Pseudo-Spin Vales by SQUID”, Jamil Woods, 07/03.
 

“A Photoluminescence Study of GaAsSbN/GaAs SQW Heterostructures”, Sudhakar Bharatan, 07/03.
 

“Molecular Beam Epitaxial Growth of GaAsSbN/GaAs Quantum Wells for 1.3-1.5 μm Emission”, David Jones, 04/03.
 

“A Study of GaAsSb/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy”, Kalyan Nunna, 04/03
 

“Study of Different Interlayers in GaSb Growth on GaAs using Molecular Beam Epitaxy”, Liangjin Wu, 05/02
 

Photoreflectance Study of Te-Doped GaSb at the E0 Transition, Baohong Gong, 9/99
 

Electrical Properties of MBE Grown Undoped and Doped InSb/GaAs Using SnTe Source, Thomas A. Rawdanowicz, 10/97
 

Photoreflectance Study of Te-Doped GaSb at the E0+D0 Transition, Solomon Mulugeta, 8/97
 

In-Situ MBE Characterization: RGA and RHEED, Juanita Barnes Rhodes 7/97.
 

Low Temperature Photoreflectance of GaSb, Devonna Faulk, 7/96.
 

Theoretical Study of InAsSb/InTlSb as a Long Wavelength Material, Shahnaz Chowdhury-Nagle, 6/96.
 

TEM, SIMS, SEM and AFM analysis of Te implanted GaSb, Badri Mangalam, 9/95.
 

Ion Implantation Damage and Annealing in GaSb, Rajiv Parakkat, 4/95.
 

LPEE Growth of Te-Doped GaSb Layers at 474°C And Electrical Properties of Au/n-GaSb Schottky Diodes, Huang JenSheng, 2/94.
 

Schottky Diodes and p-n Junctions on LPEE Grown n-GaSb, Gaojun Qiu, 2/94.
 

Photoluminescence Characteristics of LPEE Grown Te Doped GaSb and GaInAsSb, Lori Small, 7/93.
 

Characterization of LPEE Grown Te Doped GaInAsSb Epilayers, D. Simpson, 12/92.
 

Photoreflectance of LPEE Grown GaSb and GaInAsSb Epilayers, R. Cardona, 8/92.
 

Photoluminescence Study of Liquid Phase Electroepitaxially Grown GaSb and GaInAsSb Layers, S. Vaddi, 1991.
 

Growth and Characterization of InGaAsSb on (100) InAs, S. Stewart Mcrae, 1988.
 

LPEE Growth and Characterization of InGaAsP on (100) InP, M. Khorrami, 1988.
 

Current Controlled Liquid Phase Epitaxial Growth and Characteristics of InGaAsP (l=1.3mm) on (100) InP, L. Jones, 1986.
 

Undergraduate Presentations:

Sinelk Berhane,Contact Resistance by Transfer Length Measurement”, Student Oral presentation at 2011 North Carolina LSAMP/RISE Joint Research Symposium, April 15th,  2011, Fayetteville, NC.

 

Recent Awards Earned by Group Members:

 

1. Pavan Kasanaboina, "Top 10 Graduate of Class of 2016", 2016.

 

2. Pavan Kasanaboina, "Big Idea Competition" sponsored by NCA&T’s Center for Entrepreneurship and Innovation, 2016 ($350.00).

 

3. Pavan Kasanaboina, "Cold Science Exploration Award" by Montana Instruments, 2015.

 

4. Prithviraj Deshmukh, "H H Stadelmaier Award" for excellence in the area of X-ray diffraction and Metallurgy, American Society for Metals (ASM), 2015 ($100.00).

 

5. Pavan Kasanaboina, "Student's Travel Award" NAMBE 2015 ($500.00).

 

6. Pavan Kasanaboina, "PhD runner-up" in 3rd Annual College of Engineering Graduate Student Poster Competition, NCA&T State University, Greensboro, NC, 2014 ($350.00).

 

7. Adam Bowen, "PhD runner-up" MRS/ASM/AVS Meeting, 2012.

 

 

 

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