Molecular Beam Epitaxy Laboratory

NanoWire Research

CENTER of Excellence

Nitride Research



Prof.Iyer has been responsible for the initiation and development of NCA&TSUs state of the art Molecular Beam Epitaxy (MBE) Laboratory and associated academic and research programs. She has been a PI of over $8 million in DoD research projects. She was also the Director of the Center of Excellence for Battlefield Capability Enhancements, which focus on developing technologies for environmentally stable flexible panel displays.
Her current research work is in the molecular beam epitaxial (MBE) growth, characterization and fabrication of GaAsSb(N) nanowire based photodetector and noise measurements for integrated nano-photonics and nano solar cells. She has worked extensively on novel dilute nitride antimonide based narrow band gap compound semiconductor for infrared sources and detectors encompassing a wide infrared wavelength region from 1m to 20 m and GaAsSb nanowires for infrared photodetectors. The other research projects in progress include ZnO alloys based thin film transistors on plastic substrates for flexible electronics and assembling of solar cells for solar concentrators.
The research work in the past 30 years also includes transparent and conducting oxides by spray pyrolysis, transparent conducting oxide/Si solar cells, compound semiconductor based solar cells in the near infra-red region and extensive optical characterization of semiconductors namely low temperature photoluminescence and photoreflectance characteristics of compound semiconductor based quantum well heterostructures.

Principal Accomplishments

MBE growth of GaAsSbN nanowires with room temperature photoluminescence at 1.3 μm, MBE growth of InSbN/GaAs heterostructure with absorption cut off wavelength at 10 μm, GaAsSbN/GaAs single quantum well structures of high quality LED and lasers at 1.6 μm, GaAsSbN thick epilayer lattice matched to GaAs of 1.0 eV band gap for solar cell applications, low temperature MBE growth of novel AlGaAsN for potential application in hybrid organic/inorganic light emitting device, demonstrated SnTe as a well behaved n-type dopant in InSb with a 77K mobility of 94,098 cm2/V-sec,liquid phase epitaxial growth of high quality InGaAsSb lattice matched to GaSb for infrared photodetectors, highly transparent and conducting films of tin oxide and ZnO films by spray pyrolysis and by RF sputtering on PEN substrates, fabrication of ZnO based thin film transistors, tin oxide/Si solar cells (5% efficiency) by spray pyrolysis.

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?010  , North Carolina A&T State University, Greensboro, NC 27410