Ph.D.,Physics, Indian Institute of Technology,Delhi,

 India (1983)

M.Sc., Delhi University, Delhi, India (1976)

B.Sc.,Delhi University, Delhi, India (1974)

Prof. Iyer has been responsible for the initiation and development of NCA&TSU’s Molecular Beam Epitaxy (MBE) Laboratory, associated research program and educational component. Her current research interests are focused on the study of novel material systems grown by molecular beam epitaxial (MBE), characterization and nano-device structures of dilute antimonide nitride alloys encompassing near IR, Mid to Very long wavelength IR regions for optoelectronic device applications. She is also the Director of the Center of Excellence for Battlefield Capability Enhancements, which focus on developing technologies for environmentally stable flexible flat panel displays.

The research work carried out by Dr. Iyer over the last decade also includes study of low threading dislocation density compliant layers for devices operating in the mid infrared region, liquid phase electro-epitaxial growth of Sb based binaries and quaternary alloys lattice matched to GaSb for mid infrared optoelectronic device applications, detailed study of the low temperature photoluminescence and photoreflectance characteristics of these layers to study the nature of the defects and critical energy transition points, respectively, damage studies of the ion implanted species in GaSb and their recovery by rapid thermal annealing using Rutherford back-scattering/channeling technique, semi-insulating properties of Fe-doped InP, and transparent and conducting oxides by spray pyrolysis and sputtering.

Lab1: Molecular Beam Epitaxy Laboratory

Lab2: Characterization Laboratory

Journal Publications:

• L.Wu, S. Iyer, K. Gibson, J. Li, J. Reppert , A. M. Rao, K. Matney, J. Lewis “A study of low-temperature growth of III-V alloys for transparent layers”, J. Vac. Sci. Tech. B, 27, 6, 2375 (2009).

• K. Sivaramakrishnan, A. T. Ngo, S. Iyer, and T. L. Alford, “Effect of Thermal Processing on Ag Thin Films of Varying Thickness Deposited on Zinc Oxide and Indium Tin Oxide”, Journal of Applied Physics, 105, 063525 (2009).

• S. Bhagat, H. Han, Y. Zoo, J. Lewis, S. Grego, K. Lee, S. Iyer, and T.L. Alford, “Effects of Deposition Parameters on the Electrical and Mechanical Properties of Indium Tin Oxide on Polyethylene Naphthalate Substrates Deposited by Sputtering”, Thin Solid Films, 516, 4064-4069 (2008).

• Kalyan Nunna, S. Iyer, L.Wu, J. Li, S.Bharatan, X.Wei, R.T. Senger, and K.K. Bajaj, “Nitrogen Incorporation and Optical Studies of GaAsSbN/GaAs Single Quantum Well Heterostructures” J. Appl. Phys.102, 053106 (2007).

• S. Bharatan S. Iyer, K. Matney, K. Nunna, W. J. Collis, J. Reppert, A. M. Rao and P. R.C. Kent, “ The Effects of Annealing on the Structural, Optical and Vibrational Properties of Lattice-Matched GaAsSbN/GaAs Grown by Molecular Beam Epitaxy” J. Appl. Phys.102, 023503 (2007)

• S. Iyer, L. Wu, J. Li, S. Potoczny, K. Matney and P. R. C. Kent, Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells, J.Appl. Phys. 101, 113508-13 (2007).

• Kalyan Nunna, S. Iyer, L. Wu, S. Bharatan, Jia Li, K.K. Bajaj, X.Wei, and R.T. Senger, “Optical Studies of MBE Grown GaAsSbN/GaAs Single Quantum Well Structures” J. Vac. Sci. Tech. 25, 1113-16, (2007).

• Jia Li, Shanthi Iyer, Sudhakar Bharatan, Liangjin Wu, Kalyan Nunna, Ward Collis, K. Bajaj, and K. Matney “Annealing Effects on the Temperature Dependence of the Photoluminescence of GaAsSbN Single Quantum Wells”- J. Appl. Phys. 98, 013703(1)-(6) (2005)

• L. Wu, S. Iyer, K. Nunna, J. Li, S. Bharatan, W. Collis and K. Matney “MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells”- J. Cryst. Growth 279, 293-302 (2005).

• T. A. Rawdanowicz, S. Iyer , W. C. Mitchel, A. Saxler and S. Elhamri, “Electronic properties of Hetero-epitaxial Undoped and n-InSb Epilayers using SnTe Source by Molecular Beam Epitaxy”, J. Appl. Phys. 92, 296(2002)

• S. Iyer, S. Mulugeta, W. Collis, S. Venkatraman, K. K. Bajaj and G. Coli, "Photoreflectance Studies of Te-Doped GaSb at the E₀+D₀ Transition", J. Appl. Phys. March 2000.

• S. Iyer, Jie Li, Shanaz Chowdhury-Nagle, and K.K Bajaj, "InAsSb/InTlSb Superlattice-A Proposed Heterostructure for Long Wavelength Infrared Detectors",J. Electron. Mater. 26,347 (1997).

• S. Iyer, R. Parakkat, B. Mangalam, B. Patnaik,M. Falvo, and N. Parikh, " A Study of the Ion Implantation Damage and Annealing Behavior in GaSb", J. Electron. Mater. 25, 119-124 (1996).

• S. Iyer, Lori Small, S. Hegde, K.Bajaj, and Ali Abul-Fadl "Low Temperature Photoluminescence of LPEE Grown Te-Doped GaSb" J. Appl. Phys., 77, 5902-09 (1995).

• S. Iyer, S. Hegde, K.K. Bajaj, A. Abul-Fadl, and W.Mitchel, "Photoluminescence Study of LPEE Grown GaInAsSb Epilayers on GaSb" J. Appl. Phys. 73, 3948-3951 (1993).

• S. Iyer, S. Hegde, A. Abul-Fadl, K.K. Bajaj and W. Mitchel, " Growth and Photoluminescence Study of GaSb and Ga1-xInxAsySb1-y Grown on GaSb Substrates by Liquid- Phase Electroepitaxy" Phys. Rev.B 47,1329-39 (1993).

• A. Abul-Fadl, W. Collis, S. Maanaki, T. McCarty and S. Iyer, "Selective Etchback and Growth of InGaAs on (100) Fe:InP by Electroepitaxy", J. Electron. Mater., 19, 111?6 (1990).

• S. Iyer, A.T. Macrander, R.F. Karlicek, Jr. and S. Lau, "Semi-Insulating Properties of Fe-Doped InP Grown by Hydride VPE", J. Appl. Phys., 66, 5880-4 (1989).

• S. Iyer, A. Abul-Fadl, W.J. Collis and M.N. Khorrami, "Properties of Undoped and Mn?Doped InGaAsP Grown by LPEE", Thin Solid Films 163, 427?435 (1988)

• Shanthi Iyer, E.K. Stefanakos, A. Abul-Fadl and W.J. Collis "CCLPE Growth and Characterization of InGaAsP", J. Crystal Growth 70, 162?8 (1985).

• Shanthi Iyer, E.K. Stefanakos, A. Abul-Fadl and W.J. Collis "Diffusion Coefficient and Differential Mobility of As in for LPE and Current Controlled LPE", J. Crystal Growth 67, 337-42 (1984).

• E. Shanthi, A. Banerjee and K.L. Chopra, "Dopants Effects in Sprayed Tin Oxide Films", Thin Solid Films 88, 93-100 (1982).

• E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Electrical and Optical Properties of Tin Oxide Films Doped with F and (Sb+F)", J. Appl. Phys. 53, 1615-21 (1982).

• E. Shanthi, V. Dutta, A. Banerjee and K.L. Chopra, "Electrical and Optical Properties of Undoped and Antimony - Doped Tin Oxide Films", J. Appl. Phys. 51, 6243-51 (1980).

• E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Annealing Characteristics of Tin Oxide Films Prepared by Spray Pyrolysis", Thin Solid Films 71, 237-44 (1980).

Refereed Proceedings:

• S. Bhagat, Y. Zoo, H. Han, J. Lewis, S. Grego, K. Lee, S. Iyer, and T. L. Alford “Mechanical Properties of Indium Tin Oxide on Polyethylene Napthalate Substrates”, Materials Research Society Proceedings, 1012 Y12-21 (2007).

• Sudhakar Bharatan, S. Iyer, Kevin Matney, Ward J. Collis, Kalyan Nunna, Jia Li, Liangjin Wu, Kristopher McGuire, Laurie E. McNeil, “Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications”, Mater. Res. Soc. Symp. Proc. 891, 0891-EE10-36.(1-6) (2006).

• Liangjin Wu, S. Iyer, Kalyan Nunna, Sudhakar Bharatan, Jia Li, and Ward J. Collis, “Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs”, presented at Materials Research Symposium J18.34, 2005 Spring Meeting, San Francisco, CA. Mar. 28, 2005, Mat. Res. Soc. Symp. Proc. J18.34 (2005).

• Liangjin Wu, S. Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis, and Kevin Matney, “MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells”   Mat. Res. Soc. Symp. Proc. 799, Z1.9.1 (2004).

• J. Li, T. Rawdanowicz, S. Iyer, S. Venkatraman and W.J. Collis, "Molecular Beam Epitaxial Growth and Doping of InSb using SnTe Source" Proc. of TMS Editor Ben Q Li, p277 1998

• J. Li, S. Iyer, S. Venkatraman, "Rheed Study of Oxide Desorption of InSb", Presented at the MRS Fall Meeting, Boston, MA (Dec.1, 1997), Mat. Res. Soc. Symp. Proc.484 (1997).

• S. Iyer, S. Mulugeta, J. Li, B. Mangalam, and S. Venkatraman, " Photoreflectance Study of MBE

• Grown Te-doped GaSb at the E₀+D₀ Transition", Presented at the MRS Fall Meeting, Boston, MA (Dec.2, 1997), Mat. Res. Soc. Symp. Proc.484, 57-62 (1997).

• S. Iyer, K.K. Bajaj, Shahnaz Chowdhury-Nagle and Jie Li, " Theoretical Study of InTlSb/InAsSb Superlattice for Far Infared Detector", ", Presented at the MRS Spring Meeting, San Francisco (April 8, 1996), Mat. Res. Soc. Symp. Proc. 421, 395(1996).

• S. Iyer, R. Parakkat, B. Patnaik, N. Parikh and S. Hegde, "Ion implantation damage and annealing in GaSb", Mat. Res. Soc. Symp. Proc., 316, 185-190 (1994)

• Shanthi N.Iyer, S.Hegde, K.K.Bajaj, A.Abul-Fadl, and W.Mitchel, " Low Temperature PL Characterization of LPEE Grown GaSb and GaInAsSb Epilayers on GaSb" Mat. Res. Symp. Proc. vol. 299, 41-45 (1993).

• S. Iyer, A. Abu-lFadl, A. Macrander, J. Lewis, W. Collis and J. Sulhoff,"Liquid Phase Electroepitaxial (LPEE) Growth of GaSb and GaInAsSb"; Presented at the MRS Fall Meeting, Boston, MA (Nov 30, 1989), Mat. Res. Soc. Symp. Proc., Vol.160, 445-449 (1990).

• S. Iyer, A. Abul-Fadl, W.J. Collis and M.N. Khorrami, "Characterization of Mn-Doped InxGa1-xAsyP1-y Grown by LPEE""; Presented at the MRS Fall Meeting, Boston, MA, Dec.1, 1987, Proc. of Materials Research Symposium on Epitaxy of Semiconductor Layered Structures, Vol. 102, 201-7 (1987).

• A. Abul-Fadl, S. Maanaki, W.J. Collis and S. Iyer, "Selective Electro-epitaxial Growth of In.53Ga.47As", IEEE SoutheastCon., 52-55 (1987).

• E. Shanthi, A. Banerjee and K.L. Chopra, "Undoped and Doped SnO2/Si Junctions for Photovoltaic Applications", Proc. National Solar Energy Convention, Annamalainagar,India (1980), p.382.

• E. Shanthi, D.K. Pandya, and K.L. Chopra, "Transparent and Conducting Coatings for Solar Cells"; Presented at the 7th Int. Solar Energy Congr., New Delhi, India (Jan. 1978), Sun: Mankind's Future Source of Energy, Oxford, Pergamon (1978), p. 698 - 702.