Publications:
S. Owusu-Ofori, Ali Abul-Fadl,
“Multidisciplinary Design of a Reporting System Utilizing Pager Technology”
for the 66 Mechanical Division , Division for the 2001 ASEE Annual Conference in
Albuquerque, NM, (2001).
S.
Iyer, Lori Small, S. Hegde, K.Bajaj, and Ali Abul-Fadl
"Low Temperature Photoluminescence
S.
Iyer, S. Hegde, K. K.
Bajaj, A. Abul-Fadl, and W. Mitchel, “Photoluminescence Study of Liquid Phase Electroepitaxially Grown GaInAsSb on (100) GaSb,”
Appl. Phys. 73 (8) 15 (1993).
S.
Iyer, S. Hegde, A. Abul-Fadl, K. K. Bajaj, and W. Mitchel, “Growth and
Photoluminescence of GaSb and GaInAsSb grown on GaSb substrates by liquid-phase
electroepitaxy” Phys. Rev.
B
S.
Iyer, A. Abul-Fadl, A. T. Macrander, J. Lewis, W. J. Collis, and J. Sullloff,
"Liquid Phase Eletroepitaxial (LPEE) Growth of GaSb and GaInAsSb", MRS
Proceedings No. 160 (Materials Research Society, Pittsburgh, 1990).
A. Abul-Fadl,
W. J. Collis, S. Maanaki, T. McCarthy, and S. Iyer, "Selective Etchback and
Growth of InGaAs on (100) Fe: InP by Electroepitaxy", J. Electronic
Material, 111-6 (1990).
S.
Iyer, A.
Abul-Fadl, W. J. Collis, and M. N. Khorrami, "Properties of Undoped and Mn-Doped
InGaAsP Grown by LPEE" Thin Solid Films 163, 427 435 (1988).
A.
Abul-Fadl, W. J. Collis, S. Iyer, and S. Maanaki, "Selective Etch-Back and
Growth of InGaAs on (100) Fe: InP by Electroepitaxy", 1987
Electronic Materials Conference, Santa Barbara, California (June 24-26,1987).
S. Iyer, A
Abul-Fadl, W. Collis, and M. Khorrami, "Properties of Undoped and Mn-Doped InxGal-xAsyP1-y
Grown by LPEE", Presented by Dr. S. Mohan in the International Conference on
ThinFilms, New Delhi, India (December 1987).
S.
Iyer, A. Abul-Fadl, W. Collis, and
M. N. Khorrami, "Characterization Mn-Doped InxGal-xAsyP1-y
Grown by LPEE", Proceedings of Materials Research Symposium on Epitaxy of
Semiconductor Layered Structures, vol. 102 201-7 (1987).
S.
Iyer, E. K. Stefanakos, A. Abul-Fadl
and W. J. Collis, "Diffusion Coefficient and Differential Mobility of As in
In for LPE and Current Controlled LPE", J. Crystal Growth 67, 337-342 (1984).
A.
Abul-Fadl, E. K. Stefanakos, and W. J.
Collis, "Current Controlled LPE Growth of InxGal-xAs on GaAs",
J. Crystal Growth, 51, 279 (1981).
A.
Abul-Fadl, E. K. Stefanakos, and W. J. Collis, "Current Controlled
Liquid Phase Epitaxial (CCLPE) Growth of InGaAs on (100) InP",
J. Electronic Materials, 11,
559 (1982).
A.
Abul-Fadl, E. K. Stefanakos, and W. J. Collis, "Current Controlled Liquid
Phase Epitaxial (CCLPE) Growth of InGaAs
on (100) InP", Presented during the 23rd Electronic Material Conference,
Santa Barbara, California (June 23-27, 1981).
J.
W. McPherson, W. Collis, E. K. Stefanakos, A. Savavi, and A. Abul-Fadl,
"Band Bending and Passivation Studies of GaAs Grain Boundaries", J.
Electrochem. Soc., 127, 2713 (1980).
A.
Abul-Fadl, E. K. Stefanakos, W. Nance,
W. Collis, and J. Mcpherson, "Characterization of GaAs Layers Grown on Polycrystalline GaAs by LPE and Current Controlled
LPE", J. Elect. Material, 9, 631
(1980).
A.
Abul-Fadl, E. K. Stefanakos, W. Nance, W. Collis, and J. Mcpherson,
"Characterization of GaAs Layers Grown on Polycrystalline GaAs by LPE and Current Controlled
LPE", Presented during the 21st Electronic Material Conference, Boulder, Colorado (June
27-29,1979).
W.
Collis, E. K. Stefanakos, and A. Abul-Fadl, "LPE Grown
Homojunctions in Gal-xAlxAs
A.
Abul-Fadl, E. K. Stefanakos, "Current Controlled Liquid Phase
Epitaxial Growth of InP", J. Crystal Growth, 39, 341 (1977).
A.
Abul-Fadl, E. K. Stefanakos, "Peltier Cooling at In-InP
Interface", J. Appl. Phys., 47, 4627 (1976).
E. K. Stefanakos, A. Abul-Fadl, and M. D. Workman, "Measurments of
the Peltier Cooling at a Ga-GaAs Interface Using a Liquid Phase Epitaxy
System", J. Appl. Phys., 46, 3003 (1975).
E. K. Stefanakos, A. Abul-Fadl, and R. F. Tinder, " Desorption of Na
and K from Niobium", Surface Science, 28, 221 (1975).
D.E. Moxey, A. Abul-Fadl, and S. Iyer, “LPEE Growth and
Characterization of n-GaSb and GaInAsSb on (100) GaSb at 580 C,”
Proc., SSST, March 1992.
D. L.
Simpson, S. Iyer, and A. Abul-Fadl, “Liquid Phase Electroepitaxial (LPEE)
Growth and Photoluminescence Characterization of Undoped GaInAsSb (2.25mm) at
530 C,” Proc., SSST, March 1992.
R.
Cardona, S Iyer, and A. Abul-Fadl, “Photoreflactance Study of LPEE Grown III-V
Epilayers,” Proc. SSST, March 1992.
James O.
Akpede, Ward J. Collis, and Ali Abul-Fadl, “Deposition System for Amorphous
Silicon Thin Films,” Proc., CSA, March 1991.
C. Durham, A. Abul-Fadl, and S. Iyer, “Photoluminescence/Photoreflectance
Data Acquisition,” Proc., CSA, March 1991.
S. Vaddi, S. Iyer, and A. Abul-Fadl, “LPEE Growth of GaInAsSb/GaSb
System,” Proc., CSA, March 1991.
A.
Abul-Fadl, W. J. Collis, S. Iyer, and S. Maanaki, "Selective
Electropitaxial Growth of InGaAs", Presented during the IEEE
Southeast-Con '87, Tampa Florida (April 5-8, 1987).
A. Abul-Fadl, S. Maanaki, W.
J. Collis, and S. Iyer, "Selective Electro-epitaxial Growth of
S. Kadamani, A. Abul-Fadl, , "Selective Growth of InGaAs on InP by
Electroepitaxy", Fourth Annual Meeting of Florida Society for Electron
Microscopy, Tampa, Florida, (February 24-25,
(1986).
A. Rena Fisher, Ward Collis, and Ali Abul-Fadl, “ Consideration in the
Operation of a Metal- Organic Vapor Phase Epitaxy System,” Presented during
the 1986 HBCU Workshop at NASA Langly Research Center. Hampton, Virginia
(November 7, 1986).
Ward Collis and Ali Abul-Fadl, “Thin-Film Growth and Characterization
of III-V Semiconductor Materials at NC A&T State University,” Presented
during the 1986 HBCU Workshop at NASA Langly Research Center. Hampton, Virginia (November 7,
1986).